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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Fabrication of ZrC, HfC, TaC-based Fibrous Monolithic Ceramics for Rocket Propulsion Systems

    SBC: Sensintel Inc.            Topic: N/A

    The goal of this program is to develop a low cost, flexible manufacturing method for the production of high temperature ceramic composites for rocket propulsion systems. The matrix materials selected for this program will be ZrC, HfC, and TaC. These-materials have good oxidation/corrosion and ablation resistance at elevated temperatures, but typically do not possess the thermal shock resistance an ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  2. Bottom Anti-Reflective Coatings (BARCs) for 193 nm Lithography

    SBC: Brewer Science Incorporated            Topic: N/A

    A long-standing trend in the integrated circuit industry is to reduce pattern geometries on semiconductor substrates. To continue this trend, the next exposure wavelength after on-going deep-ultraviolet (248 nm) will be 193 nm. This SBIR Phase I program will identify and develop thermosetting bottom anti-reflective coatings (BARCs) meeting requirements for use with 193 nm unilayer resists. A serie ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  3. Development of Uncooled Microbolometer Arrays for IR Imaging

    SBC: Brewer Science Incorporated            Topic: N/A

    Ion-implanted, thin polymer films exhibit a large temperature coefficient of resistance which suggests their application in microbolometer arrays used for infrared ( IR) imaging and temperature mapping. Compared to current microbolometer designs which require a series of difficult deposition steps, an ion-implanted polymer-based device requires only a single layer which can be applied by spin coat ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  4. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  5. Low Cost CCVD Mullite and Alumina-Titania Interface Coatings for Ceramic Matrix Composites

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Nicalon fiber-reinforced SiC matrix composites owe their good mechanical properties at room temperature to either C or BN interfaces, which provide a weak interfacial bond. However, C and BN interfaces encounter oxidation problems at elevated temperatures in oxidizing environments resulting in degradation of mechanical properties. Recent efforts to replace C and BN interfaces have identified alu ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  6. Low Temperature CMOS Integratable Ferroelectric Thin Film Process

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Multi-component dielectric thin films suitable for solid state electronics have been deposited using various conventional chemical vapor deposition (CVD) techniques, including organometallic CVD, plasma enhanced CVD, and low pressure CVD. However, these approaches are difficult to integrate with standard silicon IC processing of ferroelectric DRAM and NVFRAM attributed to high deposition temperat ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  7. Cascaded Cryogenic Flexible Loop Heat Pipes (P12-2511)

    SBC: DYNATHERM CORP.            Topic: N/A

    Future spacecraft will require efficient heat transport at 60K Or lower, and will require flexible and thermal diode features. Cryogenic flexible heat pipes and capillary pumped loops have been developed, but are not capable of adverse tilt operation and rapid, autonomous startup. Loop heat pipes with advanced fine pore evaporator wicks show promise for meeting future needs, provided that rapid, a ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  8. Novel Auger Transistors

    SBC: Epitaxial Technologies, LLC            Topic: N/A

    Epitaxial Technologies proposes to develop innovative material structures for Auger transistors that can be used for millimeterwave oscillators. We will achieve this objective by performing device designs to determine suitable material structures and epitaxial growth processes. The primary goal of this proposed Phase I effort is to demonstrate the feasibility of Auger transistors by developing te ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  9. Linear Antimony-based HFETs for Microwave and Millimeter Wave Applications

    SBC: Epitaxial Technologies, LLC            Topic: N/A

    Epitaxial Technologies proposes to develop novel material and device tech, nologies using antimony-based active channels for highly linear microwave devices that can be used to simultaneously produce low noise and high power. To do this, we will perform materials and device design to determine suitable material structures and epitaxial growth processes. The main goal of this proposed Phase I effo ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  10. Alternative Substrates for Materials Integration

    SBC: EPITRONICS CORP.            Topic: N/A

    The recent demonstration of twist bonded GaAs substrates offers the potential to develop universally compliant substrates upon which almost any III-V or related semiconductor can be grown without lattice mismatch induced defect formation. Compliant substrates would rapidly expand and improve a number of device applications, such as Sb-based detectors and a wide range of InGaAlAsP devices, which ar ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
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