Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Bottom Anti-Reflective Coatings (BARCs) for 193 nm Lithography

    SBC: Brewer Science Incorporated            Topic: N/A

    A long-standing trend in the integrated circuit industry is to reduce pattern geometries on semiconductor substrates. To continue this trend, the next exposure wavelength after on-going deep-ultraviolet (248 nm) will be 193 nm. This SBIR Phase I program will identify and develop thermosetting bottom anti-reflective coatings (BARCs) meeting requirements for use with 193 nm unilayer resists. A serie ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  2. Development of Uncooled Microbolometer Arrays for IR Imaging

    SBC: Brewer Science Incorporated            Topic: N/A

    Ion-implanted, thin polymer films exhibit a large temperature coefficient of resistance which suggests their application in microbolometer arrays used for infrared ( IR) imaging and temperature mapping. Compared to current microbolometer designs which require a series of difficult deposition steps, an ion-implanted polymer-based device requires only a single layer which can be applied by spin coat ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  3. Cascaded Cryogenic Flexible Loop Heat Pipes (P12-2511)

    SBC: DYNATHERM CORP.            Topic: N/A

    Future spacecraft will require efficient heat transport at 60K Or lower, and will require flexible and thermal diode features. Cryogenic flexible heat pipes and capillary pumped loops have been developed, but are not capable of adverse tilt operation and rapid, autonomous startup. Loop heat pipes with advanced fine pore evaporator wicks show promise for meeting future needs, provided that rapid, a ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  4. Novel Auger Transistors

    SBC: Epitaxial Technologies, LLC            Topic: N/A

    Epitaxial Technologies proposes to develop innovative material structures for Auger transistors that can be used for millimeterwave oscillators. We will achieve this objective by performing device designs to determine suitable material structures and epitaxial growth processes. The primary goal of this proposed Phase I effort is to demonstrate the feasibility of Auger transistors by developing te ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  5. Linear Antimony-based HFETs for Microwave and Millimeter Wave Applications

    SBC: Epitaxial Technologies, LLC            Topic: N/A

    Epitaxial Technologies proposes to develop novel material and device tech, nologies using antimony-based active channels for highly linear microwave devices that can be used to simultaneously produce low noise and high power. To do this, we will perform materials and device design to determine suitable material structures and epitaxial growth processes. The main goal of this proposed Phase I effo ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  6. A High-Speed Full Frame Laser 3D Imager

    SBC: TECHNEST, INC.            Topic: N/A

    High-speed three-dimensional (3D) imaging of objects and targets is a very important functionality of advanced sensor systems in both military and civilian applications. This capability can provide many BMDO systems with a leapfrog performance advance in target detection, identification, classification, tracking, and kill determination. The 3D imaging techniques also have enormous commercial marke ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  7. A Novel Omni-directional 3D Camera for Battlefield Modeling

    SBC: TECHNEST, INC.            Topic: N/A

    To the best of our knowledge, there is no existing battle field modeling or reconnaissance technology that can provide both the real-time three dimensional (3D) range information and the omni-directional viewing capability at any cost. The primary objective of this project is to fill this gap, and to develop a high speed and low-cost 3D image sensor with an omni viewing angle (i.e., 360 degree) fo ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  8. Mems-Based, Reconfigurable, Fault-Tolerant Optical Backplan

    SBC: Minmax Technologies            Topic: N/A

    Backplanes are key building blocks around which larger electronic systems are often implemented. They are designed so that the insertion of application derived function boards can use backplane paths for board-to-board communication. As systems grow, requiring more, higher-bandwidth paths, electronic backplanes are becoming inadequate and, for example, pin limitations have become a severe design c ...

    STTR Phase I 1998 Department of DefenseMissile Defense Agency
  9. High-Power, Frequency-Stabilized Diode Laser for Raman Spectroscopy

    SBC: PROCESS INSTRUMENTS, INC.            Topic: N/A

    We propose to develop intermediate to high power (.1 to 4 W), frequency- stable diode lasers with high modulation capability and long life. Our approach can provide fixed-frequency radiation sources for 1 pace-based ballistic missile defense applications. To demonstrate the technology we will develop a compact, lightweight, relatively inexpensive, proprietary external-cavity-stabilized diode laser ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  10. Development of AlGaN/SiC Epitaxial Wafers

    SBC: TECHNOLOGIES & DEVICES INTERNATIONAL,            Topic: N/A

    We propose to develop AlGaN/SiC epitaxial wafers to be used as substrates for III-V nitride homoepitaxy. Lack of GaN and AIN substrates for homoepitaxy limits the development of electronic devices based on III-V nitrides. TDI has demonstrated that thin (~0.5 Sun) high quality GaN layers can be grown on silicon carbide wafers by hydride vapor phase epitaxy (HVPE). These structures, consisting of a ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
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