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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Multi-band Range and Doppler Processing Using S2-CHIP Technology

    SBC: SCIENTIFIC MATERIALS CORP.            Topic: MDA04040

    The scope of this proposed effort is to design and demonstrate a multi-band (S and X), wide instantaneous bandwidth (>1 GHz S-band and >2 GHz at X-band) range processor utilizing S2-CHIP technology. S2-CHIP, termed for spatial spectral coherent holographic integrating processor, is an analog optical signal processor that has the ability to process coherent multi-band, ultra-wide-bandwidth radar r ...

    SBIR Phase I 2004 Department of DefenseMissile Defense Agency
  2. Active frequency stabilized laser systems for high performance defense applications

    SBC: SCIENTIFIC MATERIALS CORP.            Topic: MDA04020

    This proposed Phase I project is aimed at developing a turn-key highly-coherent laser system for commercial and high-performance military applications. The core technology of the proposed system is based on regenerative spectral hole burning (RSHB) materials. RSHB materials currently provide the narrowest optical resonance recorded in a solid state material. The ultra-narrow resonant structure ...

    SBIR Phase I 2004 Department of DefenseMissile Defense Agency
  3. Highly Efficient MOSHFET Based X-band Transmitter-Switch Module

    SBC: Sensor Electronic Technology, Inc.            Topic: MDA04T013

    The output power and power added efficiency are the key performance parameters of modern transmitter/receiver (T/R) modules. The optimization of these parameters depends mostly on the RF characteristics of the active elements used in the T/R module output stages. GaAs FETs and HFETs that are currently used do not allow for high drain bias and large input signal swings. Power combining elements res ...

    STTR Phase I 2004 Department of DefenseMissile Defense Agency
  4. Development of Multi-Wafer Growth Reactor With Migration Enhanced MOCVD Capability for AlInGaN-based Transistor Wafer Production

    SBC: Sensor Electronic Technology, Inc.            Topic: MDA04035

    SET will develop commercially viable large area multi-epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules.

    SBIR Phase I 2004 Department of DefenseMissile Defense Agency
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