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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Anion Exchange Resin for Chirality-based Separation of Single-wall Carbon Nanotubes

    SBC: Sepax Technologies, Inc.            Topic: N/A

    Sepax Technologies, Inc. has identified a new type of anoin-exchange resin which separates single-wall carbon nanotubes (SWCNTs) with >80% recovery yield and resolves in a single pass the chiral tubes of (6,5) well from commercial SWCNT starting materials by Chromatography. Improvement and scale up of the targeted resin production will facilitate the separation of chiral nanotubes for the academic ...

    SBIR Phase II 2012 Department of CommerceNational Institute of Standards and Technology
  2. Calculation of Impulse Response Function During Realistic Scenarios

    SBC: NORTHWEST RESEARCH ASSOCIATES, INC.            Topic: DTRA103001

    It is well known that satellite communications and radar signals propagating in the natural ionosphere can be disturbed. It has also been widely reported that the ionosphere is subject to even greater disturbances following nuclear detonations. Hence the design of robust satellite communications and radar systems must take into account the effects of ionospheric disturbances. Radar and communic ...

    SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency
  3. Innovative Computational Mitigation of Radiation Effects in Nano-technology Microelectronics

    SBC: Orora Design Technologies, Inc.            Topic: DTRA103002

    Orora Design Technologies, Inc. proposes to develop an innovative computer-aided design (CAD) based methodology and enabling tools for rapid radiation-hardened prototyping and migration of military satellite microelectronics. A key innovative tool to be explored is automated generation and validation of behavioral models for complex analog, digital and mixed-signal circuits, including radiation e ...

    SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency
  4. Technologies to Mitigate Radiation Effects in Advanced Nanoscale Microelectronics

    SBC: Orora Design Technologies, Inc.            Topic: DTRA112003

    The goal of this research is to develop electronic design automation (EDA) tools to automate the following three major radiation-hardened-by-design (RHBD) tasks: (1) The capture of RHBD design constraints and design rules for sub-90nm mixed-signal designs in an industry-standard EDA data base, (2) Checking and verifying if a given sub-90nm mixed-signal design satisfies all the RBHD design const ...

    SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency
  5. The Characterization and Mitigation of Radiation Effects on Nano-technology Microelectronics

    SBC: SCIENTIC INC            Topic: DTRA121002

    The ultimate goal of this effort is the development of advanced radiation hardened material systems and technology solutions for implementation into both silicon and compound semiconductor technologies at the nanotechnology feature sizes through the use of a gridded capacitor research methodology. To accomplish this, our team proposes to identify, fabricate, and electrically characterize both pre ...

    SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency
  6. Radiation Effects Characterization Tool for SiGe Processes

    SBC: RIDGETOP GROUP INC            Topic: DTRA121002

    Ridgetop Group will develop a low-cost reliability and radiation effects characterization tool for state-of-the art silicon-germanium (SiGe) fabrication processes. The significance of this innovation is that SiGe bipolar complementary metal oxide semiconductor (BiCMOS) integrated circuits (ICs) have demonstrated extremely high performance for critical DOD applications, and SiGe has also been shown ...

    SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency
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