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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Anion Exchange Resin for Chirality-based Separation of Single-wall Carbon Nanotubes

    SBC: Sepax Technologies, Inc.            Topic: N/A

    Sepax Technologies, Inc. has identified a new type of anoin-exchange resin which separates single-wall carbon nanotubes (SWCNTs) with >80% recovery yield and resolves in a single pass the chiral tubes of (6,5) well from commercial SWCNT starting materials by Chromatography. Improvement and scale up of the targeted resin production will facilitate the separation of chiral nanotubes for the academic ...

    SBIR Phase II 2012 Department of CommerceNational Institute of Standards and Technology
  2. FIREBALLS

    SBC: Nichols Research Corp            Topic: N/A

    THIS PROJECT DEMONSTRATES AN EFFECTIVE METHOD FOR RESOLVING THE PROBLEM OF TRANSIENT BACKGROUND PHOTON NOISE (TEMPORIAL REDOUT VARIATIONS) CAUSED BY AN INTERMEDIATE ALTITUDE (40 TO125 KM) NUCLEAR FIREBALL WHICH AFFECTS THE FUNCTIONS OF BMD OPTICAL SENSORS. THE OBJECTIVE OF THE PHASE I STUDIES IS TO:1) DEVELOP A PERMANENT DATA BASE FROM DIGITIZED IMAGE EN- HANCE ORIGINAL TEST FILM IN WHICH TO DEMON ...

    SBIR Phase I 1985 Department of DefenseDefense Threat Reduction Agency
  3. Radiation Effects Characterization Tool for SiGe Processes

    SBC: RIDGETOP GROUP INC            Topic: DTRA121002

    Ridgetop Group will develop a low-cost reliability and radiation effects characterization tool for state-of-the art silicon-germanium (SiGe) fabrication processes. The significance of this innovation is that SiGe bipolar complementary metal oxide semiconductor (BiCMOS) integrated circuits (ICs) have demonstrated extremely high performance for critical DOD applications, and SiGe has also been shown ...

    SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency
  4. The Characterization and Mitigation of Radiation Effects on Nano-technology Microelectronics

    SBC: SCIENTIC INC            Topic: DTRA121002

    The ultimate goal of this effort is the development of advanced radiation hardened material systems and technology solutions for implementation into both silicon and compound semiconductor technologies at the nanotechnology feature sizes through the use of a gridded capacitor research methodology. To accomplish this, our team proposes to identify, fabricate, and electrically characterize both pre ...

    SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency
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