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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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The Characterization and Mitigation of Radiation Effects on Nano-technology Microelectronics
SBC: SCIENTIC INC Topic: DTRA121002The ultimate goal of this effort is the development of advanced radiation hardened material systems and technology solutions for implementation into both silicon and compound semiconductor technologies at the nanotechnology feature sizes through the use of a gridded capacitor research methodology. To accomplish this, our team proposes to identify, fabricate, and electrically characterize both pre ...
SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency -
Dynamic Frequency Passive Millimeter-Wave Radiometer Based on Optical Up-Conversion
SBC: PHASE SENSITIVE INNOVATIONS INC Topic: 941DIn the proposed effort, we will leverage this extensive experience and capabilities to realize a frequency agile mmW radiometer that can cover the range of DC-110 GHz and can be scaled to DC-200 GHz under Phase II. Ours is a photonic system that multiplies and up-coverts a low-frequency reference signal onto an optical carrier (laser) using EO modulation, then uses the modulation sidebands to inj ...
SBIR Phase I 2013 Department of CommerceNational Oceanic and Atmospheric Administration -
Radiation Effects Characterization Tool for SiGe Processes
SBC: RIDGETOP GROUP INC Topic: DTRA121002Ridgetop Group will develop a low-cost reliability and radiation effects characterization tool for state-of-the art silicon-germanium (SiGe) fabrication processes. The significance of this innovation is that SiGe bipolar complementary metal oxide semiconductor (BiCMOS) integrated circuits (ICs) have demonstrated extremely high performance for critical DOD applications, and SiGe has also been shown ...
SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency