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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Programmable Analog Computer

    SBC: FOARD SYSTEMS DESIGN, INC.            Topic: N/A

    The objective is to build and evaluate a novel neural computer architecture for tasks such as the real-time analysis of the output of large numbers of sensors tracking many objects simultaneously. This problem is analogous to the identification of aspecific event signature embedded in the vast quantity generated by a typical high-energy particle research facility, which represents one of the front ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  2. Growth of AlN Crystals

    SBC: HEXATECH            Topic: N/A

    The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. Large Area Hydride Vapor Phase Epitaxy of Gallium Nitride

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates, Gallium nitride substrates are expected to further improve the performance of thesedevices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density GaN substrat ...

    SBIR Phase II 2001 Department of DefenseMissile Defense Agency
  4. 4 Single Crystal Aluminum Nitride Substrates"

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Attempts to grow large area low defect density aluminum nitride substrates has had limited success. We propose the use of Kyma Technologies' novel growth process for production of 4

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  5. Gallium Nitride Epitaxial Growth on Aluminum Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    This program will develop a process for growth of low defect density GaN epitaxial layer on aluminum nitride substrates. Utilizing a novel high rate material transfer process, thick, low defect density, free-standing AlN substrates will be fabricated byKyma Technologies. The nitride MOVPE growth process will be employed to grow gallium nitride epitaxial layers on this substrate material. The Al ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Gallium Nitride on Silicon Materials Assessment for GaN-Based Low Noise Amplifiers using Pendeoepitaxial Growth Techniques

    SBC: Nitronex Corporation            Topic: N/A

    Nitronex will develop GaN on silicon substrates for GaN-based LNAs utilizing pendeoepitaxial growth techniques. The properties of these revolutionary low-defect-density GaN on Silicon wafers makes higher performing power devices with a high degree ofdevice integration possible resulting in system level improvements in military (power transmission, radar, wireless communications), industrial, and ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Single Longitudinal Mode Distributed Feedback Fiber Optics Laser

    SBC: Optigain, Inc            Topic: N/A

    A true single longitudinal mode distributed feedback (DFB) fiber laser will be developed. The first and only, a preliminary demonstration of this laser has just been published, but it is not truly single frequency. We shall develop and commercialize the world's first DFB fiber laser with Bragg gratings written directly onto the core of the fiber. We shall implement an innovative external technique ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  8. Tunable 1 Micron Fiber Laser

    SBC: Optigain, Inc            Topic: N/A

    In this Phase I study, we will demonstrate high power, continuous wave (CW) single spatial mode laser action at the 1 um wavelength. There are two innovative aspects in our proposal: the incorporation of commercially available very high power, not necessarily single mode, semiconductor laser diodes as pump sources; and, a novel single mode fiber, doped with the appropriate rare earth ions. The pum ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  9. Quantum Dots: Next Generation of Electronic Phosphors

    SBC: Spectra Science Corp.            Topic: N/A

    N/A

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
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