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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. SILICON CARBIDE INSULATED GATE BIPOLAR TRANSISTOR

    SBC: CREE RESEARCH, INC.            Topic: N/A

    N/A

    SBIR Phase I 1996 National Aeronautics and Space Administration
  2. Nonequilibrium Electron Transport in InP Based Hybrid Heterojunction

    SBC: EPITRONICS CORP.            Topic: N/A

    InP based heterojunction bipolar transistors (HBTs) exhibit proven potential for use in high performance digital integrated circuits and discrete microwave components. For high speed applications, it is desirable to utilize structures that have been designed to promote high levels of nonequilibrium electron transport as this allows realization of higher electron velocities than possible for diffus ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  3. RESEARCH IS PROPOSED LEADING TO THE DEVELOPMENT OF A REFRIGERATOR FOR USE IN SPACECRAFT TO PROVIDE COOLING FOR LOW TEMPERATURE STORAGE OF FOOD AND BIOLOGICAL SAMPLES IN THE TEMPERATURE RANGE 0 DEGREES F AND CAPACITIES IN THE RANGE 1 TO 2 KW.

    SBC: General Pneumatics Corporation            Topic: N/A

    RESEARCH IS PROPOSED LEADING TO THE DEVELOPMENT OF A REFRIGERATOR FOR USE IN SPACECRAFT TO PROVIDE COOLING FOR LOW TEMPERATURE STORAGE OF FOOD AND BIOLOGICAL SAMPLES IN THE TEMPERATURE RANGE 0 DEGREES F AND CAPACITIES IN THE RANGE 1 TO 2 KW. THE SYSTEM PROPOSED OPERATES ON THE STIRLING REFRIGERATION CYCLE. THIS IS A CLOSED, THERMODYNAMIC REGENERATIVE CYCLE IN WHICH THE GASEOUS WORKING FLUID EXPERI ...

    SBIR Phase I 1985 National Aeronautics and Space Administration
  4. Microcryocooler for Wafer Scale Integration with Sensors

    SBC: General Pneumatics Corporation            Topic: N/A

    CRYOCOOLER MICROELECTROMECHANICAL MICRODYNAMICS INTEGRATED GENERAL PNEUMATICS CORP'S PRELIMINARY DESIGN FOR EMPLOYING MICRODYNAMICS TO PRODUCE MICROELECTROMECHANICAL CLOSED-CYCLE CRYOCOOLERS USING SILICON PROCESSING TECHNIQUES WILL BE USED FOR MAKING INTEGRATED CIRCUITS IN PHASE 1. MICROMINIATURE COOLERS WILL BE INTEGRATED AT THE WAFER SCALE WITH A WIDE VARIETY OF SENSORS AND OTHER COLD ELECTRONIC ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  5. Band-Gap Engineered Varistors

    SBC: Angstrom Devices, Inc.            Topic: N/A

    Solid-state electronic devices are often subjected to high voltage transients generated by switching, lightning, or electrostatic discharge. These transients can cause mission critical components to fail. Varistors are increasingly used to avoid such failures. The current varistor devices, however, are not well suited for high frequency applications and the increasing trend towards device miniatur ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  6. High Energy Density Inductors

    SBC: Angstrom Devices, Inc.            Topic: N/A

    Inductors are essential components of military and commercial power management and electronic systems. Existing ferrite based inductors have reached a technology plateau that allow only marginal improvements in performance per unit volume. It is anticipated that the future inductor based technologies, such as EMI suppression, would require significantly higher energy density inductors. Fundamental ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  7. Sigec Heteroepitaxial Layer Growth By Low Temperature, High Purity

    SBC: LAWRENCE SEMICONDUCTOR RESEARCH LABORATORY, INC.            Topic: N/A

    THE GOAL OF THE PROPOSED RESEARCH IS TO DEVELOP A PROCESS GROW DEVICE QUALITY Si-Ge-C STRAIN LAYERS HETEROEPITAXIALLY ONTO SINGLE CRYSTAL SILICON SUBSTRATES. Si-Ge-C ALLOYS WILL MAKE POSSIBLE A NEW CLASS OF HETEROJUNCTION DEVICES IN WHICH THE BANDGAP CAN BE TAILORED TO BE WIDER OR NARROWER THAN SILICON, AND IN WHICH PARTIAL OR COMPLETE STRAIN COMPENSATION IS POSSIBLE. INITIAL PROCESS DEVELOPMENT W ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  8. Economical Processing Of Carbon-Carbon Composites For Dual Use Aerospace And Commercial Applications

    SBC: ATS-MER, LLC            Topic: N/A

    N/A

    SBIR Phase II 1996 National Aeronautics and Space Administration
  9. Advanced Electrode Materials For Lithuim Rechargeable Battery

    SBC: ATS-MER, LLC            Topic: N/A

    N/A

    SBIR Phase II 1996 National Aeronautics and Space Administration
  10. LOW COST, HIGH THERMAL CONDUCTIVITY C-C COMPOSITES VIA ONE-STEP MANUFACTURING PROCESS

    SBC: ATS-MER, LLC            Topic: N/A

    N/A

    SBIR Phase I 1996 National Aeronautics and Space Administration
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