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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. COTS MMW Radar for Tracking Persons within a Security Perimeter

    SBC: PSQUAREDT LLC            Topic: HSB0121005

    The implications of the proposed investigations are that radar systems already implemented for the automotive industry can be exploited, adapted and optimized for this application. These radar systems are inexpensive, of small size, employ advanced processing techniques which allow the tracking of threat targets, transmit low average power (10 milliwatts) and are proven to be people safe. We will ...

    SBIR Phase I 2012 Department of Homeland Security
  2. A Novel Fractionation and Concentration System for Improved Biological Detection

    SBC: INNOVAPREP LLC            Topic: HSB0111002

    Detection of bioaerosols is a cornerstone in the protection of our nation from bioterrorist and pandemic events. Rapid bioaerosol detection systems have advanced dramatically in recent years, but the lack of integratable automated sample preparation for these systems remains a major deficiency. Three significant issues are (a) a lack of an interface between large environmental samples and sample p ...

    SBIR Phase II 2012 Department of Homeland Security
  3. Development of Low Temperature Ultracapacitor

    SBC: Yardney Technical Products, Inc.            Topic: A12aT010

    The objective of this Phase 1 effort is to develop an asymmetric supercapacitor (ASC) that provides>10 Wh/kg energy density and a high power density, and maintains this performance down to -55 degrees C. Yardney Technical Products (YTP), a recognized specialty high energy battery manufacturer in Pawcatuck, CT in collaboration with the Jet Propulsion Laboratory (JPL) proposes to design, develop and ...

    STTR Phase I 2012 Department of DefenseArmy
  4. Nondestructive Concrete Characterization System

    SBC: Troxler Electronic Laboratories            Topic: A12aT013

    Currently nuclear-based gauges are the most widely used equipment in the construction industry to measure moisture and density of pavement materials. Such measurements are very accurate, rapid, and non-destructive. Attempts to replace these nuclear methods by non-nuclear methods have shown strong limitations. For this project, we propose to integrate nuclear and seismic technologies to measure t ...

    STTR Phase I 2012 Department of DefenseArmy
  5. High Performance, Cost Effective, Planar Molecularly Controlled Semiconductor Resistor (MOCSER) Gas Sensors on InAs and InN

    SBC: KYMA TECHNOLOGIES, INC.            Topic: A12aT014

    We plan to implement a planar Molecularly Controlled Semiconductor Resistor (MOCSER) gas sensor on both InAs and InN platforms for the ppt-ppm detection of NOx and H2O. Kyma Technologies and Duke University will leverage Duke"s leading MOCSER based NOx sensor technology which uses surface functionalization of InAs with hemin (chloroprotoporphyrin IX iron(III)) to create a strong affinity for NOx. ...

    STTR Phase I 2012 Department of DefenseArmy
  6. High Quality, Low Cost, and High Purity AlGaN Epitaxy with Reduced Surface Dislocation Density

    SBC: KYMA TECHNOLOGIES, INC.            Topic: A12aT019

    Aluminum Gallium Nitride (AlGaN) has broad dual use applications for power transistors, high frequency transistors, high power Schottky barrier diodes, and solar-blind detectors, as well as ultra-violet laser diodes and ultra-violet light emitting diodes. This unique material system spans the capabilities that lie between Gallium Nitride (GaN) and Aluminum Nitride (AlN), enabling custom tailored p ...

    STTR Phase I 2012 Department of DefenseArmy
  7. Bonded Joint Analysis Method

    SBC: Global Engineering and Materials, Inc.            Topic: N12AT004

    A combined discrete cohesive interface fracture and continuum damage mechanics initiation and propagation toolkit for Abaqus will be developed for the residual strength prediction of adhesively bonded composite structures subjected to multi-axial loading. This tool will allow us, for the first time, to be able to simulate concurrently both the continuum and discrete damage progression at the bonde ...

    STTR Phase I 2012 Department of DefenseNavy
  8. Total Fatigue Life Assessment of Complicated Structures

    SBC: Global Engineering and Materials, Inc.            Topic: N12AT006

    Global Engineering and Materials, Inc. (GEM) along with its team members Northwestern University, Lockheed Martin, and Boeing Company, propose to develop an automatic software tool for 2D/3D fatigue crack growth prognosis of complicated structures under multi-axial loading. The XFAT toolkit will be developed by integrating a unified crack initiation and propagation model with an enhanced mesh inde ...

    STTR Phase I 2012 Department of DefenseNavy
  9. Submarine ES System RF Groom&Certification

    SBC: SEACORP, LLC            Topic: N08T015

    US Navy submarine forces currently employ an independent team to test, measure, calibrate and certify radio frequency (RF) signal paths through sail mounted antennae to the inboard radio rooms in a process that can take in excess of 60 man-days to complete. Ships personnel have no means of calibrating or performing an operational verification of the ES suite once underway. Ships have no means of p ...

    STTR Phase II 2012 Department of DefenseNavy
  10. Producibility of Gallium Nitride Semiconductor Materials

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA09T001

    The overall objective of this program is to improve the producibility of HVPE GaN through the use of in-situ monitoring during the growth process. Various in-situ monitoring devices will be used: a UV absorption technique to monitor the GaCl concentration above the growing GaN wafer; a commercial BandiT system capable of measuring optical emission from the growing wafer in order to measure the su ...

    STTR Phase II 2012 Department of DefenseMissile Defense Agency
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