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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. COMPUTERIZED EMERGENCY OPERATION PROCEDURES RESEARCH

    SBC: Accident Prevention Group            Topic: N/A

    THE PURPOSE OF PHASE I OF THIS RESEARCH PROJECT IS TO CRITICALLY REVIEW THE EXISTING COMPUTERIZED EOP SYSTEMS FOR BOTH PWR AND BWR PLANTS, DEVELOPED BY VARIOUS NATIONAL AND INTERNATIONAL ORGANIZATIONS TO FULLY UNDERSTAND THEIR ADVANTAGES, DISADVANTAGES AND LIMITATIONS IN TERMS OF THEIR IMPACT ON OPERATORS PERFORMANCE AND RELIABILITY AND RECOMMEND ONE SYSTEM OR A COMPOSITE OF SEVERAL SYSTEMS, BEFOR ...

    SBIR Phase II 1993 Nuclear Regulatory Commission
  2. REAL-TIME COLLECTION OF OPERATIONAL DATA TO SUPPORT RISK-BASED OPERATION REGULATION AND INSPECTIONS AT NUCLEAR POWER PLANTS

    SBC: Accident Prevention Group            Topic: N/A

    COMPUTERIZED DATA COLLECTION DEVICES EXIST AND ARE BEING USED IN VARIOUS APPLICATIONS AT SOME NPPS FOR SYSTEMS AND EQUIPMENT NOT INSTRUMENTED IN THE CONTROL ROOM. HOWEVER, CURRENT APPLICATIONS IN THE NUCLEAR POWER INDUSTRY ARE RATHER SPORADIC AND NOT EXPLOITING THE FULL POTENTIAL OF THE TECHNOLOGY. FOR EXAMPLE, SEVERAL DIFFERENT NPPS USE SUCH SYSTEMS FOR SINGLE- PURPOSES SUCH AS TRENDS IN EQUIPMEN ...

    SBIR Phase I 1993 Nuclear Regulatory Commission
  3. High Current CW Superconducting RFQ Linac

    SBC: Accsys Technology, Inc.            Topic: N/A

    THE EFFECTIVENESS OF THE NEUTRAL PARTICLE BEAM (NPB) MISSILE DEFENSE SYSTEM DEPENDS ON THE SUCCESSFUL ACCELERATION OF HIGH BRIGHTNESS H ION BEAMS AT HIGH CURRENTS WITH CONTINOUS WAVE (CW) OPERATION. PRESENT BASELINE DESIGNS FOR THESE POWERFUL LINAC SYSTEMS INCLUDE ONE OR MORE STAGES OF BEAM COMBINATION (FUNNELING) INTO LATER STAGES OF THE LINAC TO OVERCOME THE CURRENT LIMITATIONS OF THE INITIAL LI ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  4. BIMETALLIC PRECURSORS FOR CHEMICAL VAPOR DEPOSITION

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS PROCESSING SHARES MANY COMMON FEATURES WITH WELL-ESTABLISHED SILICON PROCESSING. TECHNOLOGY HAS BEEN DEMONSTRATED FOR PRODUCING OHMIC AND SCHO ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  5. HIGH CONDUCTIVITY SILICON CARBIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    HIGH POWER AND HIGH TEMPERATURE ELECTRONIC DEVICES ARE IMPORTANT IN BOTH DEFENSE AND COMMERCIAL SYSTEMS. BETA SILICON CARBIDE IS AN EXCELLENT CANDIDATE SEMICONDUCTOR MATERIAL FOR DEMANDING APPLICATIONS DUE TO ITS HIGH BREAKDOWN VOLTAGE, RELATIVELY LARGE BAND GAP, HIGH THERMAL CONDUCTIVITY AND HIGH MELTING POINT. USE OF SILICON CARBIDE THIN FILMS IS HAMPERED, HOWEVER, BY THE INABILITY TO REPRODUCIB ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  6. Negative Electron Affinity Diamond Vacuum Collector Transistor

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    SEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMAN ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  7. Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    TITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  8. Doped Silicide OHMIC Contacts To Silicon Carbide

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  9. DIAMOND COLD CATHODES FOR FLAT PANEL DISPLAYS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  10. Ferroelectric Capacitors for Pulse Power Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
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