You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Integrated Power Electronics Cooling System Using EHD- Enhanced Microchannel Technology

    SBC: ATEC, Inc.            Topic: N/A

    ATEC and TA&T, in collaboration with the University of Maryland, will develop a light-weight, low-cost ceramic-based, high heat flux microchannel heat sink device suitable for power electronics cooling applications. The combination of our uniquefabrication process and the incorporation of an active heat transfer enhancement technology(electrohydrodynamics, EHD) will provide an enabling technology ...

    SBIR Phase II 2001 Department of DefenseMissile Defense Agency
  2. Advanced Regenerators for Cryocoolers Operating at 10-100 Kelvin

    SBC: Chesapeake Cryogenics, Inc.            Topic: N/A

    The performance of high speed cryocoolers is highly dependent on an effective regenerator which has high heat capacity, large surface area, and low pressure drop. These factors can increase refrigeration capacity, lower operating temperatures and improveefficency. Parallel plate regenerators have been shown to be the most effective geometry possessing most of these characteristics. However, implem ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  3. Inspection of Composite Adhesive Bonds with an Electrochemical Sensor

    SBC: DACCO SCI, INC.            Topic: N/A

    DACCO SCI, INC., (DSI), together with the Composite Materials and Structures Center of Michigan State University, proposes a Phase I SBIR program to use an electrochemical impedance spectroscopy (EIS)-based corrosion sensor to monitor the integrity of anadhesive bondline between two composites or one composite and a metal. Using this sensor approach to detect moisture intrusion into a bondline wi ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Holographic 3D ISAR Imaging for Improved Discrimination of Ballistic Targets

    SBC: Epic Sales, Inc. Dba Epic Systems            Topic: N/A

    The goal of this project is to define and pursue novel ISAR-based coherent processing techniques to advance discrimination techniques and improve the performance of NMD radars against the emerging C2 and C3 threats. Essex plans to augment traditional ISARprocessing capabilities by extending the resolution and bandwidth via coherent combination of ISAR multi-band, multi-platform, and multi-static ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  5. Novel Broadband Materials and Components

    SBC: Epitaxial Technologies, LLC            Topic: N/A

    Epitaxial Technologies proposes to develop novel material technologies for the realization of broadband components such as oscillators, mixers and preamplifiers. We will achieve this by performing device designs to determine suitable material structures,epitaxial growth and device fabrication processes.The primary goal of this proposed Phase I effort is to demonstrate the feasibility of broadband ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  6. A Novel Panoramic Optical Sensor for Missile Seeker

    SBC: TECHNEST, INC.            Topic: N/A

    The primary objective of this SBIR is to investigate a novel panoramic image sensor design, dubbed as the

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Mid-Infrared Vertical Cavity Surface Emitting Cascade Lasers

    SBC: Maxion Technologies, Inc.            Topic: N/A

    In this program, we propose to develop vertical cavity surface emitting lasers (VCSELs)based on cascaded type-II InAs/Ga(In)Sb/AlSb quantum wells, which will operate in the3-7 microns mid-IR wavelength region in quasi-CW mode with output power exceeding1 mW. The type-II interband cascade VCSELs retain the advantages of cascade injectionand emission wavelength tailoring, while circumventing the ph ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Distributed Feedback Interband Cascade Lasers

    SBC: Maxion Technologies, Inc.            Topic: N/A

    In this program, we propose to develop single-mode distributed feedback (DFB)interband cascade lasers based on type-II InAs/Ga(In)Sb/AlSb quantum wells. Thesesemiconductor diode lasers will emit in the 3-5 micron mid-IR wavelength region andoperate in quasi-CW mode. The DFB interband cascade lasers retain the advantagesof cascade injection and emission wavelength tailoring, while circumventing th ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  9. Hydride Vapor Phase Epitaxy For Ga(In)N/AlGaN Quantum-Well Structures

    SBC: TECHNOLOGIES & DEVICES INTERNATIONAL,            Topic: N/A

    We propose to develop hydride vapor phase epitaxy (HVPE) to fabricate multi-layer epitaxial structures for advanced GaN-based devices with quantum wells. Currently, only metal organic chemical vapor deposition is employed to fabricate production GaN-baseddevices including ligh emitters and high-power microwave devices. Another epitaxial method known to deposit high quality GaN layers is the HVPE ...

    SBIR Phase II 2001 Department of DefenseMissile Defense Agency
  10. Novel Approach for AIN Boule Growth

    SBC: TECHNOLOGIES & DEVICES INTERNATIONAL,            Topic: N/A

    TDI proposes to develop aluminum nitride bulk growth technique based on a new version of hydride vapor phase epitaxial (HVPE) method. The HVPE technique is a well-established, relatively cheap method to grow thick layers of GaN on sapphire and siliconcarbide substrates. Our recent experiments showed that AIN thick epitaxial layers can be grown by HVPE. The goal of Phase II project is to develop ...

    SBIR Phase II 2001 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government