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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Carbon Nanotubes for Electromagnetic Interference Shielding

    SBC: MATERIALS RESEARCH INSTITUTE, LLC            Topic: N/A

    This STTR Phase I Program will test a processing scheme for fabricating a polymer-based nanocomposite material with significant electrical conductivity for electromagnetic interference (EMI) shielding of electronic components and signal wires. The highconductivity of the nanocomposite material is introduced by a nanophase inclusion of a class of cost-effective vapor-grown carbon nanotubes. In th ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  2. Novel Programmable Optical Interconnects for Optoelectronic Packaging

    SBC: NEW SPAN OPTO-TECHNOLOGY, INC.            Topic: N/A

    Optical interconnects are required, for high speed opto-electronic packaged computing systems for fast image data processing for missile interception and target identification. They are also useful for fast access to large intelligent database. However,low cost polymer waveguide optical intercornnects and other waveguide interconnect lines suffer from packaging difficulty of waveguide interconnect ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. Band Gap Engineering of Advanced Photodetectors via Quantum Size Effects in SiC Nanostructures

    SBC: TAITECH, INC.            Topic: N/A

    The proposed research addresses the critical need for the development of an advanced sensor technology for ballistic missile defense applications. The proposal is aimed at investigating the unique physical processes which occur in wide band gap (WBG)semiconductor nanostructures due to quantum confinement effects. Silicon carbide, an attractive high-temperature, radiation hard semiconductor, whic ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Novel heterojunction diodes for High Power Electronics

    SBC: PHOTRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Multi Junction Solar cells for Satellite

    SBC: CFD RESEARCH CORPORATION            Topic: MDA09T005

    Higher efficiency solar cells are needed to reduce mass, volume, and cost of DoD space missions. However, to achieve higher efficiency and radiation hardness of the best to date multi-junction photovoltaic (PV) devices, several challenges must be addressed. This project aims to develop: 1) Quantum Well (QW)-based multi-junction cell that exhibits enhanced efficiency, and 2) Radiation-hardened PV c ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  8. An Ultra-High Temperature Ceramic with Improved Fracture Toughness and Oxidation Resistance

    SBC: Plasma Processes, LLC            Topic: MDA09T002

    Hypersonic missile defense systems are being designed to reach global threats. During flight, external surfaces are predicted to reach temperatures in excess of 2200C. As a result, innovative, high performance thermal protection systems (TPS) are of great demand. Among ultra-high temperature ceramics (UHTC), it is well known that ZrB2- and HfB2-based materials have high melting temperatures and ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  9. Development for Radiation Hardened Applications of Advanced Electronics Materials, Processes, and Devices

    SBC: RNET TECHNOLOGIES INC            Topic: MDA09T006

    The Missile Defense Agency (MDA) seeks technical investigations related to the development and application of advanced electronic materials, processes, and devices to meet its need for radiation hardened, high performance electronics for critical space and missile applications. With the advent of smaller transistor dimensions and reductions in price per bit, significant changes in materials and pr ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  10. Contamination-free, Ultra-rapid Reactive Chemical Mechanical Polishing (RCMP) of GaN substrates

    SBC: Sinmat Inc            Topic: MDA09T001

    Gallium Nitride (GaN) substrates are ideal materials for fabrication of high-power and high-frequency devices based on III-V materials. The current state-of-the-art Chemical Mechanical Polishing (CMP) methods are plagued by several challenges, including, surface charge affects due to surface contamination, and sub-surface damages, which can limit the quality of III-V devices. Furthermore, there is ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
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