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The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.
SBC: IBEAM MATERIALS, INC. Topic: 1
GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...STTR Phase I 2013 Department of EnergyARPA-E
SBC: MICRONET SOLUTIONS INC. Topic: DMEA18B001
The objective of this proposal is to demonstrate the feasibility of producing an automated delayering and imaging system with end point detection, material density detection with built in neural network error correction. This process, coined fast Automated Delayering-Image Capture System (ADICS) leverages off of the existing Pix2Net which is a proven automated imaging 3D microchip reconstruction ...STTR Phase I 2019 Department of DefenseDefense Microelectronics Activity
High Energy Density Micro-Ultracapacitors through Tunable Electrolyte Confinement and Directional TransportSBC: MAINSTREAM ENGINEERING CORP Topic: DMEA13B001
The increasing penetration of MEMs devices into the commercial market has lead to an increasing demand for micro-sized electrical energy storage devices to interface with a support them. Electrochemical double layer capacitors hold significant promise asSTTR Phase I 2014 Department of DefenseDefense Microelectronics Activity