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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Automated In-situ Large-area De-processing of ICs with High Throughput
SBC: MICRONET SOLUTIONS INC. Topic: DMEA18B001The objective of this proposal is to demonstrate the feasibility of producing an automated delayering and imaging system with end point detection, material density detection with built in neural network error correction. This process, coined fast Automated Delayering-Image Capture System (ADICS) leverages off of the existing Pix2Net which is a proven automated imaging 3D microchip reconstruction ...
STTR Phase I 2019 Department of DefenseDefense Microelectronics Activity -
Detecting Substandard, Nonconforming, Improperly Processed and Counterfeit Materiel
SBC: VIBRANT CORP Topic: DLA15C001Vibrant Corporation and Sandia National Laboratories (SNL) propose to apply Process Compensated Resonance Testing (PCRT) to the DLA's need for an NDI method to detect counterfeit, nonconforming and improperly processed materiel. PCRT collects and analyzes the resonance frequencies of a component to detect structural defects, characterize material, analyze population variation, monitor manufacturin ...
STTR Phase I 2016 Department of DefenseDefense Logistics Agency -
High Energy Density Micro-Ultracapacitors through Tunable Electrolyte Confinement and Directional Transport
SBC: MAINSTREAM ENGINEERING CORP Topic: DMEA13B001The increasing penetration of MEMs devices into the commercial market has lead to an increasing demand for micro-sized electrical energy storage devices to interface with a support them. Electrochemical double layer capacitors hold significant promise as
STTR Phase I 2014 Department of DefenseDefense Microelectronics Activity -
Epitaxial GaN on flexible metal tapes for low-cost transistor devices
SBC: IBEAM MATERIALS, INC. Topic: 1GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase I 2013 Department of EnergyARPA-E