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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Automated In-situ Large-area De-processing of ICs with High Throughput

    SBC: MICRONET SOLUTIONS INC.            Topic: DMEA18B001

    The objective of this proposal is to demonstrate the feasibility of producing an automated delayering and imaging system with end point detection, material density detection with built in neural network error correction. This process, coined fast Automated Delayering-Image Capture System (ADICS) leverages off of the existing Pix2Net which is a proven automated imaging 3D microchip reconstruction ...

    STTR Phase I 2019 Department of DefenseDefense Microelectronics Activity
  2. Virus-Like Particle Based pan-Marburgvirus Vaccine

    SBC: LUNA INNOVATIONS INCORPORATED            Topic: CBD18A002

    Marburg virus (MARV) is a filamentous enveloped non-segmented negative sense RNA virus. This viruse is considered to be extremelydangerous with case fatality rates as high as 88-90%. Extensive efforts have gone towards effective vaccines for MARV prevention, however,none have been successfully established as licensed vaccines. Glycoprotein (GP) is the only surface protein of MARV. There are substa ...

    STTR Phase I 2018 Department of DefenseOffice for Chemical and Biological Defense
  3. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase I 2013 Department of EnergyARPA-E
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