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The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.
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Epitaxial GaN on flexible metal tapes for low-cost transistor devicesSBC: IBEAM MATERIALS, INC. Topic: 1
GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...STTR Phase I 2013 Department of EnergyARPA-E
Automated In-situ Large-area De-processing of ICs with High ThroughputSBC: MICRONET SOLUTIONS INC. Topic: DMEA18B001
The objective of this proposal is to demonstrate the feasibility of producing an automated delayering and imaging system with end point detection, material density detection with built in neural network error correction. This process, coined fast Automated Delayering-Image Capture System (ADICS) leverages off of the existing Pix2Net which is a proven automated imaging 3D microchip reconstruction ...STTR Phase I 2019 Department of DefenseDefense Microelectronics Activity