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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Automated In-situ Large-area De-processing of ICs with High Throughput

    SBC: MICRONET SOLUTIONS INC.            Topic: DMEA18B001

    The objective of this proposal is to demonstrate the feasibility of producing an automated delayering and imaging system with end point detection, material density detection with built in neural network error correction. This process, coined fast Automated Delayering-Image Capture System (ADICS) leverages off of the existing Pix2Net which is a proven automated imaging 3D microchip reconstruction ...

    STTR Phase I 2019 Department of DefenseDefense Microelectronics Activity
  2. Human Performance Optimization

    SBC: HVMN Inc.            Topic: SOCOM17C001

    During altitude-induced hypoxia, operator cognitive and physical capacity degrades, compromising individual and team performance. Cognitive degradation is linked to falling brain energy levels, increased reliance on anaerobic energy production and lactate accumulation. Ketones are the evolutionary alternative substrate to glucose for brain metabolic requirements; previous studies demonstrated that ...

    STTR Phase II 2019 Department of DefenseSpecial Operations Command
  3. Human Performance Optimization

    SBC: REJUVENATE BIO INC            Topic: SOCOM17C001

    Special OperationsForces (SOF)are an integral aspect of the US military. SOF operators are among the most elite and highly qualified individuals in the U.S.military. As such, extraordinary physical and mental demands are placed upon them to excel in extreme environments for extended periods of time. This unrelenting cycle of combat deployments and intense pre-deployment training shortens the funct ...

    STTR Phase II 2019 Department of DefenseSpecial Operations Command
  4. A Novel, Microscale, Distributable Sensor Technology for Ionizing Radiation

    SBC: CFD RESEARCH CORPORATION            Topic: DTRA14B004

    Terrorist use of radioactive nuclear materials via nuclear and/or radiological dispersion devices (dirty bombs) is a serious threat. Therefore, it is crucial to detect proliferation of nuclear material. Critical challenges include: (a) high sensitivity detection of signature emissions from radioactive isotopes, and (b) cost-effectiveness for deployment of sensor networks across large storage facil ...

    STTR Phase II 2019 Department of DefenseDefense Threat Reduction Agency
  5. High Energy Density Micro-Ultracapacitors through Tunable Electrolyte Confinement and Directional Transport

    SBC: MAINSTREAM ENGINEERING CORP            Topic: DMEA13B001

    The increasing penetration of MEMs devices into the commercial market has lead to an increasing demand for micro-sized electrical energy storage devices to interface with a support them. Electrochemical double layer capacitors hold significant promise as

    STTR Phase I 2014 Department of DefenseDefense Microelectronics Activity
  6. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase I 2013 Department of EnergyARPA-E
  7. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2014 Department of EnergyARPA-E
  8. Vertical GaN Substrates

    SBC: SIXPOINT MATERIALS, INC.            Topic: N/A

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

    STTR Phase I 2014 Department of EnergyARPA-E
  9. Vertical GaN Substrates

    SBC: SIXPOINT MATERIALS, INC.            Topic: DEFOA0000941

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

    STTR Phase II 2014 Department of EnergyARPA-E
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