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There is a critical need for electrification of transportation systems. The proposed technology enables the development of very high-power density permanent magnet motors, which when coupled to an integrated SiC drive allows for an overall specific power beyond 12 kW/kg. The proposed concept relies on the tight integration of a high-power density dual-rotor permanent magnet motor, high power densi ...

There is a critical need for electrification of transportation systems. The proposed technology enables the development of very high-power density permanent magnet motors, which when coupled to an integrated SiC drive allows for an overall specific power beyond 12 kW/kg. The proposed concept relies on the tight integration of a high-power density dual-rotor permanent magnet motor, high power densi ...

Hazard assessment tools that model the transport and dispersion of Chemical, Biological, Radiological, Nuclear and Explosive (CBRNE) materials through urban areas are only as good as the 3D models that inform the physics model. Maintaining accurate, up-to-date 3D models of urban areas is challenging. Even in the commercial world, urban construction and demolition may result in the models created a ...

Terrorist use of radioactive nuclear materials via nuclear and/or radiological dispersion devices (dirty bombs) is a serious threat. Therefore, it is crucial to detect proliferation of nuclear material. Critical challenges include: (a) high sensitivity detection of signature emissions from radioactive isotopes, and (b) cost-effectiveness for deployment of sensor networks across large storage facil ...

SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...