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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Dynamic IR Window Film to Improve Window Energy Efficiency

    SBC: IR Dynamics            Topic: DEFOA0001429

    IR Dynamics, LLC will develop a low-cost nanomaterial technology to be incorporated into flexible window films that will improve thermal insulation and solar heat gain. The team's nanomaterial will incorporate two materials. First, low-cost nanosheets will increase thermal resistance. Second, a new type of nanomaterial will allow heat, in the form of infrared radiation (IR) from the sun, to pass t ...

    SBIR Phase II 2016 Department of EnergyARPA-E
  2. Retrofittable and Transparent Super-Insulator for Single-Pane Windows

    SBC: NANOSD, INC.            Topic: DEFOA0001429

    NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...

    SBIR Phase II 2016 Department of EnergyARPA-E
  3. Retrofittable and Transparent Super-Insulator for Single-Pane Windows

    SBC: NANOSD, INC.            Topic: DEFOA0001429

    NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...

    STTR Phase II 2016 Department of EnergyARPA-E
  4. Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices

    SBC: IBEAM MATERIALS, INC.            Topic: DEFOA0000941

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2016 Department of EnergyARPA-E
  5. Vertical GaN transistors on bulk GaN substrates

    SBC: Avogy            Topic: 1

    In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...

    SBIR Phase II 2013 Department of EnergyARPA-E
  6. Application of Ultra-Low Cost Differential Pressure Sensors to the Large N Acoustic Sensor Problem

    SBC: TDA Research, Inc.            Topic: DTRA172001

    TDA Research, Inc. (TDA), designed, built, and tested a dense array of 100 very low cost infrasonic sensors. Due to their low cost (1/100x-1/10x the cost of other infrasound sensors), they can be economically deployed in very large numbers; such large arrays can gather more information than a few expensive sensors. They are sensitive from 0.1 Hz - 100 Hz down to 0.08 Pa. We tested the sensors in s ...

    SBIR Phase II 2019 Department of DefenseDefense Threat Reduction Agency
  7. Advanced Solutions for Radiation Susceptibility Analysis & Prediction

    SBC: LUCID CIRCUIT, INC.            Topic: DTRA162006

    With the advent of high-density low-power sub-20nm technology processes and circuits with tens-of-billions of transistors, radiation-induced single-event effects present a new set of design challenges for terrestrial applications. Developing reliable single-event effect resilient microelectronics in these modern technology nodes is a resource and time-intensive endeavor that further requires valid ...

    SBIR Phase II 2019 Department of DefenseDefense Threat Reduction Agency
  8. Tools for Memory Hierarchy Optimization on Pre-Exascale HPC Architectures

    SBC: EP ANALYTICS, INC.            Topic: DTRA172003

    DTRA uses High Fidelity Computer Codes (HFCC) to investigate weapon effects and techniques for countering Weapons of Mass Destruction (WMD). End-to-end HFCC simulations in support of the DTRA Agent Defeat Warfighter Capability will require calculations including multiple phenomena that occur in vastly different time scales (µ-sec to hours). As DTRA becomes increasingly reliant on computational mo ...

    SBIR Phase II 2019 Department of DefenseDefense Threat Reduction Agency
  9. Data-Driven Technology Discovery Methodologies

    SBC: Semandex Networks Inc.            Topic: DTRA162005

    During the Phase I effort, Semandex Networks and its team developed a prototype capability to detect trends in research publications by automatically identifying emerging concepts within the data. The implemented capability provides insights into past and

    SBIR Phase II 2019 Department of DefenseDefense Threat Reduction Agency
  10. Stationary Wide-Angle Concentrator PV System

    SBC: Glint Photonics, Inc.            Topic: MOSAIC

    Concentrator PV systems using highly efficient multijunction photovoltaic cells hold out the promise of very low-cost solar electricity generation, but their adoption has been hamstrung by the requirement for bulky mechanical trackers that add cost, diminish land use, increase maintenance, and exclude roof-top installations. The Stationary Wide-Angle Concentrator (SWAC) PV system will provides the ...

    SBIR Phase II 2016 Department of EnergyARPA-E
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