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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Human Performance Optimization
SBC: HVMN Inc. Topic: SOCOM17C001During altitude-induced hypoxia, operator cognitive and physical capacity degrades, compromising individual and team performance. Cognitive degradation is linked to falling brain energy levels, increased reliance on anaerobic energy production and lactate accumulation. Ketones are the evolutionary alternative substrate to glucose for brain metabolic requirements; previous studies demonstrated that ...
STTR Phase II 2019 Department of DefenseSpecial Operations Command -
Human Performance Optimization
SBC: REJUVENATE BIO INC Topic: SOCOM17C001Special OperationsForces (SOF)are an integral aspect of the US military. SOF operators are among the most elite and highly qualified individuals in the U.S.military. As such, extraordinary physical and mental demands are placed upon them to excel in extreme environments for extended periods of time. This unrelenting cycle of combat deployments and intense pre-deployment training shortens the funct ...
STTR Phase II 2019 Department of DefenseSpecial Operations Command -
Epitaxial GaN on flexible metal tapes for low-cost transistor devices
SBC: IBEAM MATERIALS, INC. Topic: 1GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase I 2013 Department of EnergyARPA-E -
Epitaxial GaN on flexible metal tapes for low-cost transistor devices
SBC: IBEAM MATERIALS, INC. Topic: 1GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase II 2014 Department of EnergyARPA-E -
Vertical GaN Substrates
SBC: SIXPOINT MATERIALS, INC. Topic: N/ASixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...
STTR Phase I 2014 Department of EnergyARPA-E -
Vertical GaN Substrates
SBC: SIXPOINT MATERIALS, INC. Topic: DEFOA0000941SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...
STTR Phase II 2014 Department of EnergyARPA-E