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Award Data
The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
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Stationary Wide-Angle Concentrator PV System
SBC: Glint Photonics, Inc. Topic: MOSAICConcentrator PV systems using highly efficient multijunction photovoltaic cells hold out the promise of very low-cost solar electricity generation, but their adoption has been hamstrung by the requirement for bulky mechanical trackers that add cost, diminish land use, increase maintenance, and exclude roof-top installations. The Stationary Wide-Angle Concentrator (SWAC) PV system will provides the ...
SBIR Phase II 2016 Department of EnergyARPA-E -
Retrofittable and Transparent Super-Insulator for Single-Pane Windows
SBC: NANOSD, INC. Topic: DEFOA0001429NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...
SBIR Phase II 2016 Department of EnergyARPA-E -
Retrofittable and Transparent Super-Insulator for Single-Pane Windows
SBC: NANOSD, INC. Topic: DEFOA0001429NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...
STTR Phase II 2016 Department of EnergyARPA-E -
Vertical GaN transistors on bulk GaN substrates
SBC: Avogy Topic: 1In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...
SBIR Phase II 2013 Department of EnergyARPA-E