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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Stationary Wide-Angle Concentrator PV System
SBC: GLINT PHOTONICS, INC. Topic: MOSAICConcentrator PV systems using highly efficient multijunction photovoltaic cells hold out the promise of very low-cost solar electricity generation, but their adoption has been hamstrung by the requirement for bulky mechanical trackers that add cost, diminish land use, increase maintenance, and exclude roof-top installations. The Stationary Wide-Angle Concentrator (SWAC) PV system will provides the ...
SBIR Phase II 2016 Department of EnergyARPA-E -
Retrofittable and Transparent Super-Insulator for Single-Pane Windows
SBC: NANOSD, INC. Topic: DEFOA0001429NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...
SBIR Phase I 2016 Department of EnergyARPA-E -
Retrofittable and Transparent Super-Insulator for Single-Pane Windows
SBC: NANOSD, INC. Topic: DEFOA0001429NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...
SBIR Phase II 2016 Department of EnergyARPA-E -
Retrofittable and Transparent Super-Insulator for Single-Pane Windows
SBC: NANOSD, INC. Topic: DEFOA0001429NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...
STTR Phase II 2016 Department of EnergyARPA-E -
Vertical GaN Substrates
SBC: SIXPOINT MATERIALS, INC. Topic: N/ASixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...
STTR Phase I 2014 Department of EnergyARPA-E -
Vertical GaN Substrates
SBC: SIXPOINT MATERIALS, INC. Topic: DEFOA0000941SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...
STTR Phase II 2014 Department of EnergyARPA-E -
Low-Cost GaN Substrates
SBC: Soraa Topic: N/ASoraa will develop a cost-effective technique to manufacture high-quality, high-performance gallium nitride (GaN) crystal substrates that are better than today’s GaN crystal substrates, which are expensive and prone to defects. Soraa will also develop pathways to large-area GaN substrates that can handle power switch applications. Substrates are thin wafers of semiconducting material needed for ...
SBIR Phase I 2014 Department of EnergyARPA-E -
Vertical GaN transistors on bulk GaN substrates
SBC: Avogy Topic: 1In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...
SBIR Phase I 2013 Department of EnergyARPA-E -
Vertical GaN transistors on bulk GaN substrates
SBC: Avogy Topic: 1In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...
SBIR Phase II 2013 Department of EnergyARPA-E