Award Data

GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

Additive manufacturing (AM) has rapidly evolved into a valuable technique for making parts which, at times, cannot be fabricated through conventional machining methods, or for fabrication of small quantities of complex parts. One challenge in the area of AM is the lack of real-time feedback on the fabrication process and the quality of the part being made. This is especially critical given the rel ...

Terrorist use of radioactive nuclear materials via nuclear and/or radiological dispersion devices (dirty bombs) is a serious threat. Therefore, it is crucial to detect proliferation of nuclear material. Critical challenges include: (a) high sensitivity detection of signature emissions from radioactive isotopes, and (b) cost-effectiveness for deployment of sensor networks across large storage facil ...