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The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. A Novel, Microscale, Distributable Sensor Technology for Ionizing Radiation

    SBC: CFD RESEARCH CORP            Topic: DTRA14B004

    Terrorist use of radioactive nuclear materials via nuclear and/or radiological dispersion devices (dirty bombs) is a serious threat. Therefore, it is crucial to detect proliferation of nuclear material. Critical challenges include: (a) high sensitivity detection of signature emissions from radioactive isotopes, and (b) cost-effectiveness for deployment of sensor networks across large storage facil ...

    STTR Phase II 2019 Department of DefenseDefense Threat Reduction Agency
  2. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2014 Department of EnergyARPA-E
  3. Vertical GaN Substrates

    SBC: Sixpoint Materials, Inc.            Topic: N/A

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

    STTR Phase I 2014 Department of EnergyARPA-E
  4. Vertical GaN Substrates

    SBC: Sixpoint Materials, Inc.            Topic: DEFOA0000941

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

    STTR Phase II 2014 Department of EnergyARPA-E
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