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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Vertical GaN transistors on bulk GaN substrates
SBC: Avogy Topic: 1In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...
SBIR Phase II 2013 Department of EnergyARPA-E -
Solid Waste Remediation System (SWRS) for Small Contingency Base Camps
SBC: ALTEX TECHNOLOGIES CORPORATION Topic: OSD12EP2To meet the requirements of the Army Solid Waste Remediation System, for Small Contingency Base Camps, Altex has developed a Compact Ward Furnace Energy Recovery System (CWFERS), which was proven feasible by testing and analysis, under a Phase I award. The system reduces fuel consumption by 92% fuel, compared to a traditional remediation system, and converts the energy in the bulk waste to hot wa ...
SBIR Phase II 2013 Department of DefenseOffice of the Secretary of Defense -
Epitaxial GaN on flexible metal tapes for low-cost transistor devices
SBC: IBEAM MATERIALS, INC. Topic: 1GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...
STTR Phase I 2013 Department of EnergyARPA-E -
Vertical GaN transistors on bulk GaN substrates
SBC: Avogy Topic: 1In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...
SBIR Phase I 2013 Department of EnergyARPA-E -
QUANTITATIVE BORESCOPE INSPECTION OF NUCLEAR REACTOR COMPONENTS INCORPORATING LOW COHERENCE INTERFEROMETRY
SBC: METROLASER, INCORPORATED Topic: 19aRegular inspection of piping for corrosion damage is crucial in nuclear power plants to prevent leakage of radioactive material into the environment, and to allay concerns of residents living within the vicinity. However, currently used methods for detecting corrosion on interior surfaces of reactor components are difficult to apply in confined spaces and do not always provide enough information. ...
SBIR Phase I 2013 Department of Energy -
Nano-Patterned Cathode Surfaces for High Efficiency Photoinjectors
SBC: RADIABEAM TECHNOLOGIES, LLC Topic: 05aPresent day photoinjector cathodes have a poor lifetime or inadequate quantum efficiency for advanced applications. In addition, the efficiency is constrained by the frequency up- conversion in the drive laser from infrared to ultraviolet photons. Novel nanofabrication techniques allow for the sub-wavelength patterning of grooves and hole-array surfaces on the cathode. Exploiting the surface plas ...
STTR Phase I 2013 Department of Energy -
AN ENEXPENSIVE HIGH-CURRENT BETATRON
SBC: ADELPHI TECHNOLOGY INC Topic: N/ATHE OBJECTIVE OF THIS PROJECT IS TO EMPLOY THE BETATRON PRINCIPLE TO PRODUCE AN INEXPENSIVE ELECTRON ACCELERATOR CAPABLE OF PRODUCING 20-50 MEV ELECTRONS WITH GOOD BEAM QUALITY AND HIGH-AVERAGE CURRENTS OF UP TO 5-50 MUA. IN CONVENTIONAL BETATRONS WHICH HAVE BEEN IN EXISTENCE FOR OVER 50 YEARS, EDDY-CURRENT LOSSES IN THE IRON LIMIT THE OPERATING FREQUENCY, THUS LIMITING THE MAXIMUM ENERGY AND CUR ...
SBIR Phase I 1994 Department of Energy -
ULTRAVIOLET-SENSITIVE LARGE-AREA AVALANCHE PHOTODIODES FOR IMPROVED CALORIMETRY
SBC: Advanced Photonix Topic: N/AN/A
SBIR Phase I 1994 Department of Energy -
A LOOK-AHEAD ADAPTIVE CONTROL SYSTEM FOR WIND TURBINE GENERATORS
SBC: AEROVIRONMENT, INC. Topic: N/AN/A
SBIR Phase I 1994 Department of Energy -
AN OPTICAL TECHNIQUE FOR NON-INTRUSIVE CHARACTERIZATION OF FINE PARTICULATES IN FLUE GAS STREAMS
SBC: Aerometrics Inc. Topic: N/AN/A
SBIR Phase I 1994 Department of Energy