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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. Solid Waste Remediation System (SWRS) for Small Contingency Base Camps

    SBC: Altex Technologies Corporation            Topic: OSD12EP2

    To meet the requirements of the Army Solid Waste Remediation System, for Small Contingency Base Camps, Altex has developed a Compact Ward Furnace Energy Recovery System (CWFERS), which was proven feasible by testing and analysis, under a Phase I award. The system reduces fuel consumption by 92% fuel, compared to a traditional remediation system, and converts the energy in the bulk waste to hot wa ...

    SBIR Phase II 2013 Department of DefenseOffice of the Secretary of Defense
  2. Vertical GaN transistors on bulk GaN substrates

    SBC: Avogy            Topic: 1

    In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...

    SBIR Phase I 2013 Department of EnergyARPA-E
  3. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase I 2013 Department of EnergyARPA-E
  4. Vertical GaN transistors on bulk GaN substrates

    SBC: Avogy            Topic: 1

    In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...

    SBIR Phase II 2013 Department of EnergyARPA-E
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