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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
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A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
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PULSE DETONATION SYNTHESIS FOR HIGH TEMPERATURE CERAMIC COMPOSITES AND COATINGS
SBC: Adroit Systems, Inc. Topic: N/AAdroit Systems, Inc. will develop a Pulse Detonation Synthesis (PDS) process to manufacture ceramic powders from gas-powder reactant mixtures more efficiently and inexpensively than current methods. A high combustion rate and simple design make the PDS system capable of mass producing these powders, which are used as raw materials for high-temperature, high-performance ceramics and ceramic composi ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
MULTI LEVEL SECURE IMAGE OPERATING SYSTEM
SBC: ARIES Technology Corporation Topic: N/AN/A
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
Chalcogenide Superconductors
SBC: Cryopower Associates, Inc. Topic: N/AWE PROPOSE TO SEARCH FOR NEW SUPERCONDUCTORS THAT ARE SIMILAR TO THE PEROVSKITE-BASED HIGH TEMPERATURE SUPERCONDUCTORS (HTS), BUT WITH THE OXYGEN REPLACED BY A CHALCOGEN, THAT IS SULFUR, SELENIUM OR TELLURIUM. WE BELIEVE THAT THE HTS COPPER OXIDES ARE NOT A UNIQUE ACCIDENT OF NATURE, BUT THAT THERE ARE OTHER COMPLEX CHEMICAL COMPOUNDS THAT COULD ALSO BE SUPERCONDUCTING. AN OBVIOUS PLACE TO LOOK WO ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
LARGE AREA NON-CONTAMINATING HIGH FLUX ATOMIC HYDROGEN SOURCE
SBC: IONWERKS INC Topic: N/AA new approach to generating atomic hydrogen (and possibly N and O) will give atomic fluxes of 10(-19) atoms/cm(-2) over a three inch wafer positioned three inches in front of the source. Scalt up to larger areas may be possible in phase II. We will examine the use of this source as an alternative to hot filament assisted generation of atomic H for diamond thin film growth. Use of the source for M ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
GROWTH OF LATTICE MATCHED GAN/INGAN/ZNO IN A MBE/CBE CHAMBER OPTIMIZED FOR HIGH TEMPERATURE WIDE BANDGAP NITRIDE GROWTH
SBC: IONWERKS INC Topic: N/AIonwerks has begun an internally funded project to design and manufacture an MBE growth chamber specifically designed and optimized for wide bandgap nitrides (compatible with Si/Ge growth also). This chamber will include two proprietary growth techniques which we have found to be crucial for formation of cBN thin films. Design and construction of this chamber is underway. We will use this equipmen ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
POLARIZATION SIGNATURE MEASUREMENTS AND SIMULATIONS
SBC: PHOTON RESEARCH ASSOC., INC. Topic: N/AThe primary result of the Phase I effort will be an optimized polarimeter which can be used in Phase II for military, remote sensing, and astronomical observations. Also the feasibility of assembling a user friendly polarization code running on a Silicon Graphics workstation will be established. Initial work in the area of polarization has been done by the principal investigator and by the subcont ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
Active Suppression of Thruster Induced Seeker Jitter Using Electro-
SBC: PROPULSION RESEARCH, INC. Topic: N/ASEEKER STABILIZATION VIBRATION SUPPRESSION ELECTRO-ACTIVE MATERIALS PROPULSION RESEARCH WILL USE ITS MINIATURE "FERRO-MAGNETIC" ACTUATOR EFFORTD CAN BE USED TO CREATE A "SEEKER ANTI-MOTION SYSTEM". THIS TECHNOLOGY TAKES AN AGGRESSIVE APPROACH TOWARD "INTELLIGENTLY" MANAGING THE SEEKER DYNAMIC RESPONSE TO INDUCED MOTION BY ISOLATING IT "DYNAMICALLY" FROM THE REAMINDER OF THE AIRFRAME USING ELECTRO- ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
SI/GE OPTICAL BUS ARRAY AND BINARY FANOUT HOLOGRAM FOR SI-BASED VLSI WAFER-SCALE OPTOELECTRONIC INTERCONNECTS
SBC: RADIANT RESEARCH, INC. Topic: N/AWe propose a dratically new optoelectronic chip modules (OCMs) concepts to optically interconnect Si-based VLSI wafer-scale integrated circuits. Realizing the fact that system clock speed is three to five times higher than that ofprocessor speed, we propose to develop an optical clock signal distribution networks for wafer-scale interconnects. The architecture is to employ a superstrate Si/Ge wave ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
Boron Nitride Coating Process Oxidation Resistant Tribological
SBC: SI Diamond Technology Inc Topic: N/AA NEW PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION (CVD0 PROCESS ACHIEVES PHENOMENALLY HIGH GROWTH RATES, EXCELLENT ADHESION AND UNIQUELY CONTROLLABLE MICROSTRUCTURES IN LOW-Z CUBIC MATERIALS AT ATMOSPHERIC PRESSURE. SI DIAMOND TECHNOLOGY, INC. PROPOSES TO EXTEND THIS TECHNOLOGY TO PRODUCE CUBIC BORON NITRIDE (cBN) COATINGS, AND EXAMINE THEIR UTILITY AS OXIDATION BARRIERS AND TRIBOLOGICAL COATINGS ON ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
Laser-based Diamond Boule Growth
SBC: SI Diamond Technology Inc Topic: N/AA NEW LASER-BASED DIAMOND GROWTH TECHNIQUE HAS BEEN SHOWN TO DELIVER GROWTH RATES HIGHER THAN ANY OTHER KNOWN TECHNIQUE. THE TECHNIQUE, BECAUSE OF ITS UNIQUE "CONTAINERLESS PROCESSING", SHOULD PROVE VERY USEFUL IN GROWING HIGH QUALITY SINGLE CRYSTAL DIAMOND FOR USE IN THERMAL MANAGEMENT AND ELECTRONIC APPLICATIONS. THE ENORMOUS GROWTH RATES POSSIBLE WITH THIS PROCESS, AND MORE IMPORTANTLY, ITS UNS ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency