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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Si-CeO2 Silicon-On-Insulator Device Structure Grown by Laser Assisted Molecular Beam Deposition

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Laser Assisted Molecular Beam Deposition (LAMBD) process for the growth of single crystal lattice matched CeO2 thin films on a Si substrate and thin film Si on CeO2 for the development and commercialization of silicon-on-insulator (SOI) devices and potentially Si based optoelectronic devices. CeO2 is nearly lattice matched to Si (0.35% rnismatched), which ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Pulsed Arc Molecular Beam Film and Powder Production System

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Pulsed Arc Molecular Beam Processing (PAMBP) process which can be used to produce high quality and high purity thin films as well as nanopowders. The PAMBP source uses a pulsed valve to generate gas pulses between two electrodes. During the gas pulse, an electric discharge is struck between the electrodes causing ablation of the cathode material. The ablat ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. High Quality Bulk GaN Crystal Growth

    SBC: Crystal Systems, Inc.            Topic: N/A

    Crystal Systems proposes in Phase I to carry out research which will establish a scientific basis for growth of high quality GaN single crystals. This will form the basis for Phase II research and development leading to the growth of large high quality GaN boules (and possibly A N boules) and 4" wafers. There is a strong need for GaN devices in the military and the potential for extensive commerci ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Multi-Evaporator Heat Pipe Network for Cryogenic Sensor Cooling

    SBC: ETA,llc            Topic: N/A

    Current thermal management systems for satellite infrared detectors employ heat pipe thermal diodes or thermal switches to couple primary and redundant mechanical cryocoolers to just a single sensor. With today's trend toward more but smaller sensors per satellite, these systems can become quite large, heavy, power hungry and expensive. Our innovation allows many sensors to be cooled with just one ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. Molecular Beam Epitaxial Growth and Characterization of Novel VCSELs at 1.55 micron

    SBC: EPITAXIAL LABORATORY INC            Topic: N/A

    The vertical-cavity-surface-emitting laser(VCSEL) which operate at 1.55 or 1.3 um has been recognized as a key device in optical interconnection systems and parallel optical processing. However, the realization of these long-wavelength VCSELs with a low threshold current has long been delayed due to the absence of a highly-reflective distributed Bragg reflector(DBR). A DBR reflectivity exceeding 9 ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Ionic Self Assembled Monolayer (ISAM) Processes for Electronic Materials and Devices

    SBC: LUNA INNOVATIONS INCORPORATED            Topic: N/A

    Novel ionic self-assembled monolayer (ISAM) processes for the fabrication of advanced electronic materials and devices will be developed through this program. Revolutionary ISAM methods to create nanostructured multi-layer inorganic/organic thin-films offer major advantages over conventional manufacturing processes, since the process is simple, low-cost and environmentally friendly in that no vola ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Protective Coatings for Optical System Components Fabricated Using Ionic Self Assembled Monolayer (ISAM) Processes

    SBC: LUNA INNOVATIONS INCORPORATED            Topic: N/A

    F&S and Virginia Tech will cooperatively develop high performance protective ionic self-assembled monolayer (ISAM) organic/inorganic coatings for space-based optical and structural components, and work with Litton to upscale practical coating manufacturing. Revolutionary ISAM methods of creating multi-layer protective nanopartwcle films offer major advantages over con-ventional coating processes, ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. High Resolution Holographic Target Tracking Sensor

    SBC: HOLOGRAPHIC OPTICS, INC.            Topic: N/A

    Optical and infrared sensors usually track the target by measuring the spatial position of a focal spot on the matrix of detectors. Range and resolution are dependent on the quality of the optics and on the complexity of the electronics (number of detectors in the matrix, their sensitivity etc). Cost is also related to these parameters and might increase exponentially with high performance systems ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Sensors-Adaptive Beam Expander

    SBC: LSA            Topic: N/A

    We propose to design and fabricate an adaptive beam expander that can be switched between two magnifications. Specifically, the beam expander provides diffraction-limited performance for laser radar beams with diameters of 1 mm and 3 mm. The adaptive beam expander is lightweight, and it has no moving parts. Because the beam expander is an afocal system, it operates on both outgoing and incoming be ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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