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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Development of a Compact Electron Beam Accelerator
SBC: MICROWAVE TECHNOLGIES, INC. Topic: N/AN/A
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide
SBC: INTRINSIC SEMICONDUCTOR CORP. Topic: N/ASilicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Optimal SiC Source Powder for Bulk SiC Growth
SBC: INTRINSIC SEMICONDUCTOR CORP. Topic: N/AThe properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Novel Technology for Electronic Multilayer Devices
SBC: Sumi Tech, Inc. Topic: N/AA novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
SBIR Phase I: Multi-faceted Positioning System for Flexible Fabrication, Micromachining and Vacuum Positioning
SBC: American Research Corporation of Virginia Topic: N/AN/A
SBIR Phase I 1996 National Science Foundation -
SBIR PHASE I: Lightweight Composites for High Performance Vanes
SBC: MATERIALS MODIFICATIONS INC Topic: N/AN/A
SBIR Phase I 1996 National Science Foundation -
SBIR Phase I: High Pressure, High Temperature Thin Film Sensors
SBC: MATERIALS MODIFICATIONS INC Topic: N/AN/A
SBIR Phase I 1996 National Science Foundation -
SBIR Phase I: An Enhanced, High Density, High Surface Area,Monolithic Composite Storage Media for Natural Gas
SBC: NewMan Technologies Inc. Topic: N/AN/A
SBIR Phase I 1997 National Science Foundation -
SBIR Phase I: A New Active Vibration Control Method for Precision Machines
SBC: Signal Separation Tech Topic: N/AN/A
SBIR Phase I 1997 National Science Foundation -
SBIR Phase I: Photoresist Polymer Masks Formed From an Aqueous Phase by Polymerization in a Two Dimensional Surfactant Template
SBC: Surfactant Assoc Inc. Topic: N/AN/A
SBIR Phase I 1996 National Science Foundation