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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 1 - 10 of 13 results
 
  • Record 1 TO 13

  1. N/A

    SBC: 21ST CENTURY SYSTEMS, INC.            Topic: N/A

    N/A

    SBIR Phase II 1999 Department of DefenseOffice of the Secretary of Defense

  2. N/A

    SBC: AZIMUTH INC            Topic: N/A

    N/A

    SBIR Phase II 1999 Department of DefenseOffice of the Secretary of Defense

  3. N/A

    SBC: BLUE ROAD RESEARCH            Topic: N/A

    N/A

    SBIR Phase II 1999 Department of DefenseOffice of the Secretary of Defense

  4. N/A

    SBC: LUNA INNOVATIONS INCORPORATED            Topic: N/A

    N/A

    SBIR Phase II 1999 Department of DefenseMissile Defense Agency

  5. N/A

    SBC: HOOD TECHNOLOGY CORPORATION            Topic: N/A

    N/A

    SBIR Phase II 1999 Department of DefenseOffice of the Secretary of Defense

  6. N/A

    SBC: TPL, INC            Topic: N/A

    N/A

    SBIR Phase II 1999 Department of DefenseMissile Defense Agency

  7. N/A

    SBC: UTRON, Inc.            Topic: N/A

    N/A

    SBIR Phase II 1999 Department of DefenseMissile Defense Agency

  8. N/A

    SBC: HYPRES INC            Topic: N/A

    N/A

    SBIR Phase II 1999 Department of DefenseMissile Defense Agency

  9. Rectifying Junctions for High Temperature, High Power Electronics

    SBC: 3c Semiconductors            Topic: N/A

    The single most important type of metal/SiC junction is the n-type, rectifying Schottky diode, because it is the voltage blocking junction in all majority carrier devices. A reliable junction of this type for n-type SiC is the key to its development for high temperature, power conditioning electronics. Phase I will demonstrate that osmium is the ideal metal for forming such junctions. Phase II wil ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency

  10. LIFETIME MEASUREMENTS FOR ROUTINE QUALITY CONTROL/ASSESSMENT OF SEMICONDUCTOR WAFERS

    SBC: INTERFACE STUDIES, INC.            Topic: N/A

    We propose to continue our development of a non-invasive probe of the electrical quality of semiconductor wafers. This technique can be used to screen wafers or to ascertain total impact of specific process steps; it may serve as a routine qualification of some processes. Modern manufacturing technology requires an increasingly detailed statistical summary of the impact of processes on devices. No ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
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