You are here
Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
-
Development of a Compact Electron Beam Accelerator
SBC: MICROWAVE TECHNOLGIES, INC. Topic: N/AMicrowave Technologies Incorporated is proposing the development of a very compact radio-frequency (rf) electron beam accelerator which appears to be well-suited for BMDO's directed energy applications. This novel concept employs a single short rf cavity operating in circular polarization to accelerate a low-energy ma ~netized pencil beam to energies that range from 2 to 10 MeV. The proposed accel ...
SBIR Phase II 1997 Department of DefenseMissile Defense Agency -
Ultra-high Dielectric Constant Dielectric Materials
SBC: TPL, INC Topic: N/ANON-NUCLEAR APPROACHES ARE SOUGHT FOR HIGH ENERGY DENSITIES FOR SPACE POWER SYSTEMS. ONE CRITICAL COMPONENT TO ACHIEVE IMPROVED PERFORMANCE IS CAPACITOR STORES. THESE ARE DEPENDENT UPON ADVANCES IN LOW LOSS, HIGH ENERGY/HIGH POWER DENSITY STORAGE MATERIALS. A UNIQUE INORGANIC COMPOSITE IS PROPOSED FOR INVESTIGATION AS A HIGH ENERGY DENSITY STORAGE MATERIAL. AN APPROACH IS FORMULATED BASED ON SOL-G ...
SBIR Phase II 1996 Department of DefenseMissile Defense Agency -
Inorganic Confromal Coatings for SIC Packaging
SBC: TPL, INC Topic: N/AGlass is an attractive material for microelectronic packaging because it is hermetically sealing, has a low coefficient of thermal expansion, and is compatible with d.c. circuits. Unfortunately, the working temperature of glass is too high for this application. Low-temperature processing of a sol-gel derived, aluminosilicate material for hermetic seals is proposed for electronic packaging. This ...
SBIR Phase II 1997 Department of DefenseMissile Defense Agency -
High Velocity Pulsed Plasma Thermal Spray
SBC: UTRON, Inc. Topic: N/AThe quality and durability of coatings produced by virtually all thermal spray techniques could be improved by, among other things, increasing the velocity with which coatings particles impact the coated surface and by better control of the chemical and thermal environment seen by the particles during flight. A new and innovative approach to thermal spraying is proposed that can increase coating p ...
SBIR Phase II 1996 Department of DefenseMissile Defense Agency -
Comprehensible Descriptions for Fast Processing of Image Data
SBC: DATAMAT SYSTEMS RESEARCH, INC. Topic: N/AThe proposed effort will apply advanced methods of hybrid learning to problems of detection and identification of sensory events (e.g., boost phase evens). Our approach aims at building a vision system capable of hybrid learning, in which symbolic (rule-based) and subsymbolic (neural network) strategies are integrated to achieve high efficiency and accuracy both in learning human comprehensible se ...
SBIR Phase II 1997 Department of DefenseMissile Defense Agency -
Development of a Compact Electron Beam Accelerator
SBC: MICROWAVE TECHNOLGIES, INC. Topic: N/AN/A
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Embedded Sensors via Laser Engineered Net Shaping
SBC: OPTOMEC, INC. Topic: N/AOptomec Design Company proposes to use Laser Engineered Net Shaping (LENSTM), a Rapid Prototyping and Manufacturing (RP&M) technology currently under development at Sandia National Laboratories (SNL), as a new method for integrating instrumentation (e.g., embedded sensors) into metal structural components. SNL has demonstrated the ability of the LENSTM technology to produce near net shape stainles ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide
SBC: INTRINSIC SEMICONDUCTOR CORP. Topic: N/ASilicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Optimal SiC Source Powder for Bulk SiC Growth
SBC: INTRINSIC SEMICONDUCTOR CORP. Topic: N/AThe properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Novel Technology for Electronic Multilayer Devices
SBC: Sumi Tech, Inc. Topic: N/AA novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency