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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. MULTI LEVEL SECURE IMAGE OPERATING SYSTEM

    SBC: ARIES Technology Corporation            Topic: N/A

    This proposed study will accomplish the following: Investigate methods for allocating image resources in MLS operating systems. Investigate methods for controlling image processes from MLS (OS). Develop algorithms for efficient image management in MLS OSs. Develop algorithms for efficient image processing security in MLS OSs. Provide a framework for automatic downgrading of images using a MLS OS. ...

    SBIR Phase II 1995 Department of DefenseMissile Defense Agency
  3. OPTIMAL ENERGY MANAGEMENT FOR KINETIC ENERGY WEAPONS

    SBC: BARRON ASSOCIATES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  4. LOW COST MULTILAYERED PZT CAPACITORS MADE USING CCVD

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Combustion chemical vapor deposition (CCVD), which was invented by the principal investigator, is a high quality film deposition technique that can inexpensively and quickly apply lead zirconate-titanate (PZT) thin films in a continuos manner. This technology can be used for the production of ferroelectric capacitors. CCVD is low cost, high quality and versatile. It does not require a reaction cha ...

    SBIR Phase II 1995 Department of DefenseMissile Defense Agency
  5. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. Production Friendly GaN Coatings Using RECVD, a New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently vacuum based methods of PVD and CVD are the only processes for forming GaN thin films and coatings. These methods are usually expensive and are not applied in a production friendly manner. An atmospheric deposition technique that inexpensively and easily applies GaN thin or thick films in an environmentally friendly manner is a priority for any number of DOD and commercial applications. ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Low Cost Multilayered PZT Capacitors Made Using CCVD

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    N/A

    SBIR Phase II 1995 Department of DefenseMissile Defense Agency
  8. Powder Synthesis and Bulk Crystal Growth of Gallium Nitride

    SBC: CERMET, INC.            Topic: N/A

    The primary goal of Phase I work is to demonstrate the feasibility of synthesizing gallium nitride (GaN) powder. Secondarily, this powder will be used to grow high-purity single crystals of GaN from a liquid GaN phase. This would be accomplished using a proprietary variation of the skull melting technique. Since GaN demonstrates peritectic-type decomposition at atmospheric pressure, the entire sku ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. HYBRIDIZED METAL MATRIX COMPOSITES FOR PASSIVE DAMPING

    SBC: CORDEC CORP.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  10. HIGH TEMPERATURE SUPERCONDUCTORS WITH IMPROVED CURRENT DENSITIES

    SBC: Cryopower Associates, Inc.            Topic: N/A

    THE APPLICATION OF HIGH TEMPERATURE SUPERCONDUCTORS IS SEVERELY LIMITED BY THE LOW CURRENT DENSITIES ACHIEVABLE IN BULK MATERIALS, SUCH AS Y1BA2CU3O(7-X), OR 123 FOR SHORT. THE LARGE CURRENT DENSITIES OBSERVED WITHIN INDIVIDUAL GRAINS (AND IN THIN FILMS) ARE REDUCED BY "WEAK LINKS" AT THE GRAIN BOUNDARIES, CAUSED BY MISALIGNMENT OF THE ANISOTROPIC GRAINS AND BY INSULATING IMPURITY PHASES. SOME OF ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
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