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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Transformational GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: DEFOA0000941

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase II 2014 Department of EnergyARPA-E
  2. High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off [Phase IIS]

    SBC: MICROLINK DEVICES INC            Topic: 1

    In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...

    SBIR Phase II 2014 Department of EnergyARPA-E
  3. Vertical GaN Substrates

    SBC: SIXPOINT MATERIALS, INC.            Topic: DEFOA0000941

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

    STTR Phase II 2014 Department of EnergyARPA-E
  4. Stationary Wide-Angle Concentrator PV System

    SBC: GLINT PHOTONICS, INC.            Topic: DEFOA0001256

    Concentrator PV systems using highly efficient multijunction photovoltaic cells hold out the promise of very low-cost solar electricity generation, but their adoption has been hamstrung by the requirement for bulky mechanical trackers that add cost, diminish land use, increase maintenance, and exclude roof-top installations. The Stationary Wide-Angle Concentrator (SWAC) PV system will provides the ...

    SBIR Phase II 2015 Department of EnergyARPA-E
  5. HYPERLAMINAR FLOW ENGINE FOR COMBINED HEAT AND POWER

    SBC: MOHAWK INNOVATIVE TECHNOLOGY, INC.            Topic: DEFOA0001380

    The team of Mohawk Innovative Technology Inc., (MiTi), University of Texas – Center for Electro-Mechanics and MITIS of Belgium propose a truly transformative, ultra-high-speed and oilfree, Hyperlaminar Flow Engine (HFE) system that combines low cost viscous shear driven compressor and expander, an integrated low pressure drop recuperator, flameless combustor, permanent magnet generator, lubrican ...

    SBIR Phase II 2015 Department of EnergyARPA-E
  6. A High Efficiency SACI 1 kW Generator System with Integrated Waste Energy Recovery

    SBC: Air Squared, Inc.            Topic: DEFOA0001380

    We propose a novel high efficiency (≈40%) generator system capable of providing 1 kWe along with hot water on-demand. The integration of two novel concepts: 1) an internal combustion engine (ICE) operating on Spark-Assisted Compression Ignition (SACI) combustion of natural gas (NG), and 2) a bottoming Organic Rankine Cycle (ORC) with waste energy recovery (WER) from ICE exhaust enables the overa ...

    SBIR Phase II 2015 Department of EnergyARPA-E
  7. A High Efficiency SACI 1 kW Generator System with Integrated Waste Energy Recovery

    SBC: Air Squared, Inc.            Topic: DEFOA0001380

    We propose a novel high efficiency (≈40%) generator system capable of providing 1 kWe along with hot water on-demand. The integration of two novel concepts: 1) an internal combustion engine (ICE) operating on Spark-Assisted Compression Ignition (SACI) combustion of natural gas (NG), and 2) a bottoming Organic Rankine Cycle (ORC) with waste energy recovery (WER) from ICE exhaust enables the overa ...

    SBIR Phase II 2015 Department of EnergyARPA-E
  8. Advanced sodium batteries with enhanced safety and low cost processing

    SBC: Materials and Systems Research, Inc.            Topic: DEFOA0000674

    The sodium battery using beta-alumina solid electrolyte is one of the most promising grid-scale electrical energy storage technologies that can balance the short-duration variability in renewable generation. Despite many advantages, the sodium batteries have several barriers for successful commercialization, mainly related to safety issues and high capital investment for installation. The safety i ...

    SBIR Phase II 2015 Department of EnergyARPA-E
  9. GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase II 2014 Department of EnergyARPA-E
  10. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2014 Department of EnergyARPA-E
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