You are here

Home » Reports

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 1 - 10 of 89 results
 
  • Record 1 TO 89

  1. Epitaxial Lateral Overgrowth of GaN in Large Area MOCVD Reators

    SBC: EMCORE CORP.            Topic: N/A

    It is unlikely that large area, cost effective, bulk GaN substrates will be commercially available in the near future. The objective of this proposal is to develop large area (>3-4

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency

  2. All Solid-State Laser for Generating Deep Ultraviolet and Middle Infrared Coherent Light

    SBC: LIGHT AGE, INC.            Topic: N/A

    The following proposal is for the Phase II development of a single laser technology capable of generating deep-ultraviolet (0.193 ~m) and middle-infrared (3-5 ~m) wavelengths. This laser will be based on alexandrite pumped, lithium fluoride color-centerlaser technology successfully demonstrated as part of our Phase I effort (contract # DASG60-97-M-1001).This work will involve collaborations with ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency

  3. TeraHertz High Reliability InP DHBT Technology for Millimeter-Wave Amplifiers and Ultra-High Speed ICs

    SBC: RJM Semiconductor, L.L.C.            Topic: N/A

    RJM Semiconductor (RJM) with subcontract support of NASA Jet Propulsion Laboratory (JPL) propose to demonstrate the world's fastest transistor technology to fabricate power amplifier integrated circuits (ICs) operating above 100GHz to be delivered to MDAand other DoD components in Phase II. This project builds upon RJM expertise in Molecular Beam Epitaxy (MBE) growth and Heterojunction Bipolar Tr ...

    STTR Phase I 2003 Department of DefenseMissile Defense Agency

  4. High Energy Density Capacitor Development

    SBC: TPL, INC            Topic: N/A

    The development of high energy storage systems with reduced size and weight are important for tactical and strategic pulsed power applications such as: electric armor, electric guns, high power microwave sources and ballistic missile applications. Thedielectric energy storage density of pulsed power materials must be increased to provide feasibility or improve performance of these systems.Capabil ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency

  5. Miniature, Ultrasensitive, Solid State Sensor for Atomic Oxygen

    SBC: TPL, INC            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency

  6. Silicon Carbide Microsensor with Piezoresistive Diamond Sensing Elements

    SBC: KULITE SEMICONDUCTOR PRODUCTS, INC.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency

  7. Crystal Growth in KTiOPO(4)-NaTiOPO(4)

    SBC: Crystal Associates Inc            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency

  8. Indium Gallium Arsenide Charge-Coupled Device for 1-3 Micrometer Imaging

    SBC: Sensors Unlimited, Inc.            Topic: N/A

    Sensors Unlimited will develop a unique "CCD"-type light detector that "sees in the dark." CCDs are the "chips" used in hand held "cam-corders" and are made from silicon which is sensitive to visible light. These new indium gallium arsenide CCDs will be sensitive to infrared (1-3 micrometer wavelength) radiation and offer the same benefits (low cost, high sensitivity, room-temperature operation) t ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency

  9. Room-Temperature Near-Infrared Camera

    SBC: Sensors Unlimited, Inc.            Topic: N/A

    Sensors Unlimited will develop an infrared camera that sees in the dark, yet costs less than $10,000 and requires no cooling. Present-day cameras for the near-infrared spectrum (wavelength range 1-3 microns) require liquid nitrogen cooling which makes them bulky and expensive. Our novel camera will be based on an array of 128 X 128 detector pixels of indium gallium arsenide (InGaAs), which has hig ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency

  10. Avalanche Photodiode for the 1.5-2.2 Micron Spectrum

    SBC: Sensors Unlimited, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government