Award Data

"Microdischarge based chemical sensing is a novel detection scheme that relies on extremely sensitive emission spectroscopy, without the need for expensive plasma sources and vacuum systems required in large scale plasmas. This technique provesparticularly powerful for metals detection due to strong emission spectra from metals in a discharge. Additionally, the sensors presented are small, rugge ...

"Microdischarge based chemical sensing is a novel detection scheme that relies on extremely sensitive emission spectroscopy, without the need for expensive plasma sources and vacuum systems required in large scale plasmas. This technique has a broad rangeof capabilities due to its universal detection capabilities for small molecules. Additionally, these sensors are small, rugged, and require very ...

"High-accuracy electromagnetic simulation method is traditionally very inefficient.Recently however, MLFMA (multilevel fast multipole algorithm) has demonstrated theability to solve scattering problems accurately up to X band (10 million unknowns).Although orders of magnitude faster than traditional accurate methods, in thehigh-frequency regime such as X band, these fast methods are still not as f ...

"The fabrication of large format, highly sensitive Focal Plane Arrays (FPAs), sensing at very long wavelength in the IR region i.e beyond 15um (VLWIR) is highly desirable for Air Force's space based applications. Currently, only limited types of arrays suchas 256 X 256 Si:As (5-20 um) are available in this IR region. However, these extrinsic detectors suffer from some fundamental limitations, such ...

"We propose a new generation of non-equilibrium superlattice, high efficiency VLWIR(14 um and longer) detectors that operate in the 40-77K temperature range. The objectives will be achieved by combining the advantages of the molecular beam epitaxy(MBE)crystal growth technique, an innovative non-equilibrium device architecture, and a superlattice structure to control the absorption cut-off waveleng ...

"Photon detectors presently available in the very long wave infrared range (lambda > 15 ¿m) are based on extrinsic silicon and HgCdTe. Due to excessive dark current, the operating temperature of these detectors is below 20K. At present, the most promisingalternative is III-V compound semiconductor superlattices based on arsenides and antimonides, such as type-II InAs/GaSb. It is here proposed ...