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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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HARDENED IMPROVED DYNAMIC RESPONSE DECOY
SBC: APTEK, Inc. Topic: N/AA FEASIBILITY STUDY OF IMPROVING DECOY PENETRATION AID (PENAID) PERFORMANCE BY SUPPLYING MEANS TO 1) ALLOW FOR DUAL CENTER OF GRAVITY (CG) LOCATION, THEREBY ENABLING INDEPENDENT FULFILLMENT OF IMPULSE BALANCING AND REENTRY STABILITY REQUIREMENTS; AND/OR 2) COUNTERACT DECOY CONING BY SENSING ITS PRESENCE, AND CORRECTING THE ANGULAR MOMENTUM OF THE DECOY TO ELIMINATE CONING.
SBIR Phase II 1989 Department of DefenseDefense Threat Reduction Agency -
UGT INSTRUMENTATION FOR ELECTRICAL PARAMETER MEASUREMENT
SBC: APTEK, Inc. Topic: N/ATHIS PROGRAM WILL DEVELOP FIELD INSTRUMENTATION SUITABLE FOR USE IN AN UNDERGROUND (UGT) OR ABOVEGROUND (AGT) RADIATION TEST ENVIRONMENT, FOR THE MEASUREMENT OF ELECTRICAL PROPERTIES OF MATERIALS AS THEY RECOVER FROM IRRADIATION. THE EFFORT WILL CONSIST OF SAMPLE HOLDER AND INSTRUMENTATION DESIGN, RESPONSE ANALYSIS, AND THE FABRICATION OF A LABORATORY TEST SETUP TO SHOW TECHNIQUE FEASIBILITY.
SBIR Phase II 1991 Department of DefenseDefense Threat Reduction Agency -
SENSITIVE LOW Z STRAIN GAGE
SBC: APTEK, Inc. Topic: N/ATHIS ACTIVITY WILL INVESTIGATE THE USE OF PVDF FILM FOR USE AS A LOW Z STRAIN GAGE. THE PVDF MATERIAL IS AN ORDER OF MAGNITUDE MORE SENSITIVE THAN PZT AS A PIEZOELECTRIC MATERIAL AND HAS AN ATOMIC NUMBER MUCH LOWER (LOW Z) THAN PRESENT RESISTIVE STRAIN GAGE MATERIALS. THEREFORE, PVDF AS A STRAIN GAGE WILL BE CAPABLE OF MEASURING MUCH LOWER LEVELS OF STRAIN THAN PRESENT GAGING TECHNIQUES, AND WILL ...
SBIR Phase II 1991 Department of DefenseDefense Threat Reduction Agency -
SENSITIVE LOW Z STRAIN GAGE
SBC: APTEK, Inc. Topic: N/AN/A
SBIR Phase I 1989 Department of DefenseDefense Threat Reduction Agency -
UGT INSTRUMENTATION FOR ELECTRICAL PARAMETER MEASUREMENT
SBC: APTEK, Inc. Topic: N/AN/A
SBIR Phase I 1989 Department of DefenseDefense Threat Reduction Agency -
A PROPOSAL TO INVESTIGATE PHYSICAL LIMITING MECHANISMS IN NUCLEAR EXPLOSION INDUCED LIGHTNING (NEIL)
SBC: Electro Magnetic Topic: N/ANUCLEAR EXPLOSION INDUCED LIGHTNING (NEIL) REPRESENTS A POTENTIALLY SEVERE THREAT TO MILITARY SYSTEMS REQUIRED TO SURVIVE AND FUNCTION AFTER EXPOSURE IN THE SOURCE REGION OF A NUCLEAR EXPLOSION. WHEREAS THERE EXISTS SOME UNCERTAINTY ABOUT THE NATURE AND MAGNITUDE OF THE THREAT, ITS EXISTENCE IS CONCLUSIVELY DOCUMENTED IN THE FILM RECORD OF ATMOSPHERIC NUCLEAR TESTS IN THE PACIFIC DURING THE 1950'S ...
SBIR Phase I 1989 Department of DefenseDefense Threat Reduction Agency -
CALIFORNIUM-252 SYSTEM FOR SINGLE EVENT UPSET TESTING OF MICROELECTRONICS.
SBC: InterScience, Inc. Topic: N/AADVANCES IN ELECTRONIC DEVICE TECHNOLOGY HAVE LED TO INCREASED PACKING DENSITIES WHILE POWER CONSUMPTION HAS DROPPED. IN GENERAL, THIS TREND IS BENEFICIAL TO AVIONICS AND SPACE APPLICATIONS EXCEPT THAT A NEW FAILURE MODE HAS ACCOMPANIED THIS MINIATURIZATION. IN HIGH ENERGY PARTICLE ENVIROMENTS, SUCH AS ENCOUNTERED IN SPACE, MICROELECTRONIC DEVICES HAVE BEEN SHOWN TO BE SUSCEPTIBLE TO TRANSIENT OR ...
SBIR Phase I 1991 Department of DefenseDefense Threat Reduction Agency -
Engineered Substrates for “Zero-Penalty” Radiation Hardening of Ultra Deep Submicron Commercial Processes
SBC: RADIATION ASSURED DEVICES, INC. Topic: DTRA08003In this proposed Phase II program we will build on the successful Phase I program where we for the first time implemented engineered epitaxial layers based on nanostructure technology that were used to harden commercial silicon devices against radiation by minimizing collected photocurrents (electron-hole pairs) via recombination centers where we demonstrated that improved radiation hardness could ...
SBIR Phase II 2009 Department of DefenseDefense Threat Reduction Agency -
EXTRINSIC PHOTOCONDUCTIVITY SWITCHES USING CVD DIAMOND
SBC: Vactronic Laboratory Equip Inc Topic: N/AEXTRINSIC PHOTOCONDUCTIVITY SEMICONDUCTOR SWITCHES (PCSS) BASED ON CVD DIAMOND-FILM (DF) HAS BEEN DEVELOPED. DIAMOND MATERIAL POSSESSES SEVERAL ADVANTAGES SUCH AS HIGH THERMAL CONDUCTIVITY AND HIGH BREAKDOWN VOLTAGES. THE PCSS BASED ON CVD DIAMOND CAN BE SUPERIOR THAN ITS COUNTERPARTS (GAAS OR SI) BY EXPLOITING THESE ADVANTAGES. CONVENTIONAL PCSS'S BASED ON GAAS SUFFER FROM PROBLEMS SUCH AS THERMA ...
SBIR Phase I 1991 Department of DefenseDefense Threat Reduction Agency -
A Radargrammetric Mapping system Using A Priori Info
SBC: VEXCEL CORP. Topic: N/AVexcel proposes a system for extracting terrain elevation from large stereo SAR databases using a priori elevation map data. This system will accelerate, automate, and improve the accuracy and robustness of radargrammetricnprocessing for data acquired from wide spectrum of existing and planned SAR platforms.
SBIR Phase I 1998 Department of DefenseNational Geospatial-Intelligence Agency