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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Pressure Sensor Electronics for High Temperature Drilling

    SBC: SVT ASSOCIATES INC            Topic: N/A

    70291S02-II This project will demonstrate and produce a greatly improved monolithic differential amplifier and switch, based on AlGaN/GaN High Electron Mobility Transistors (HEMTs) and passive components, that will be capable of operating in the high-temperature oil drilling environment. The GaN-based amplifier will have reduced temperature sensitivity at temperatures up to 400¿C. The amp ...

    SBIR Phase II 2003 Department of Energy
  2. Induim Arsenide Antimonide Very Long Wavelength Photodiodes for Near-Room-Temperature Operation

    SBC: SVT ASSOCIATES INC            Topic: N/A

    70278S02-II Commercially available photodetectors that operate in the 3-12 micron wavelength range are needed for the Long Wave Infrared (LWIR) monitoring of chemical weapons. However, these photodetectors are susceptible to high degrees of noise, have a low operating bandwidth, and require cryogenic cooling. This project will use indium arsenide antimonide, a compound semiconductor alloy wit ...

    SBIR Phase II 2003 Department of Energy
  3. Al(In)GaN-Based, High-Electron Mobility Transistors (HEMTs) on SiC for High-Power Radar Applications

    SBC: SVT ASSOCIATES INC            Topic: N/A

    73017S03-I Substantial improvements in high-power performance are predicted for high-frequency Al(In)GaN-based HEMTs on SiC substrates, which are components of Synthetic Aperture Radar systems used in national security applications. The two main issues are the growth of high-quality, insulating GaN buffer layers and the formation of hyper-abrupt Al(In)GaN/(In)GaN interfaces. This project will f ...

    SBIR Phase I 2003 Department of Energy
  4. High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N

    SBC: SVT ASSOCIATES INC            Topic: N/A

    One of the main issues for III-nitride growth is the lack of a suitable native substrate. Growth on foreign substrates such as sapphire or SiC results in nitride material with a high density of defects due to large mismatches in lattice constant and thermal expansion. Nonetheless, nitride devices grown on these substrates have demonstrated optical and electronic properties that are practically unm ...

    SBIR Phase I 2003 National Aeronautics and Space Administration
  5. Miniature Intelligent Sensor Electronics

    SBC: NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.            Topic: N/A

    The proposed system uses a combined hard-core processor/programmable-logic chip to implement the front-end control and processing functions of an intelligent sensor system. Combining these functions in a single chip is an innovation, relative to a traditional processor-only based system, because it provides re-configurable control of the sensor interface, i.e. analog and digital I/O and signal con ...

    SBIR Phase I 2003 National Aeronautics and Space Administration
  6. Novel Polyethers Doped with Nanoscale Insulating Oxides for Lithium Battery...

    SBC: H.V. Setty Enterprises, Inc.            Topic: N/A

    Novel polyethers doped with insulating oxides are used to prepare solid polymer electrolytes for high energy density lithium batteries. The electrolytes are characterized for conductivity and electrochemical stability. Prototype lithium-polymer cells with high voltage cathodes will be fabricated and feasibility demonstrated for rate capability and cyclability.

    SBIR Phase I 2003 National Aeronautics and Space Administration
  7. Acoustic Test Method for Turbofan Engine Exhaust Systems at Cruise Conditions

    SBC: Aero Systems Engineering, Inc.            Topic: N/A

    The exhaust flow from a turbofan engine operating at typical cruise conditions generates noise as turbulent flow interacts with the basic shock cell pattern. This can be a significant source of noise within the aircraft cabin. The proposed innovation is a new method for testing the acoustics of model scale turbofan engine exhaust systems at cruise conditions in a transonic wind tunnel. This would ...

    SBIR Phase I 2003 National Aeronautics and Space Administration
  8. Induim Arsenide Antimonide Very Long Wavelength Photodiodes for Near-Room-Temperature Operation

    SBC: SVT ASSOCIATES INC            Topic: N/A

    70278S02-II Commercially available photodetectors that operate in the 3-12 micron wavelength range are needed for the Long Wave Infrared (LWIR) monitoring of chemical weapons. However, these photodetectors are susceptible to high degrees of noise, have a low operating bandwidth, and require cryogenic cooling. This project will use indium arsenide antimonide, a compound semiconductor alloy wit ...

    SBIR Phase I 2003 Department of Energy
  9. Pressure Sensor Electronics for High Temperature Drilling

    SBC: SVT ASSOCIATES INC            Topic: N/A

    70291S02-II This project will demonstrate and produce a greatly improved monolithic differential amplifier and switch, based on AlGaN/GaN High Electron Mobility Transistors (HEMTs) and passive components, that will be capable of operating in the high-temperature oil drilling environment. The GaN-based amplifier will have reduced temperature sensitivity at temperatures up to 400¿C. The amp ...

    SBIR Phase I 2003 Department of Energy
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