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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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BIMETALLIC PRECURSORS FOR CHEMICAL VAPOR DEPOSITION
SBC: Advanced Technologies/Laboratories Intl Topic: N/ATHE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS PROCESSING SHARES MANY COMMON FEATURES WITH WELL-ESTABLISHED SILICON PROCESSING. TECHNOLOGY HAS BEEN DEMONSTRATED FOR PRODUCING OHMIC AND SCHO ...
SBIR Phase II 1993 Department of DefenseMissile Defense Agency -
HIGH CONDUCTIVITY SILICON CARBIDE SUBSTRATES
SBC: Advanced Technologies/Laboratories Intl Topic: N/AHIGH POWER AND HIGH TEMPERATURE ELECTRONIC DEVICES ARE IMPORTANT IN BOTH DEFENSE AND COMMERCIAL SYSTEMS. BETA SILICON CARBIDE IS AN EXCELLENT CANDIDATE SEMICONDUCTOR MATERIAL FOR DEMANDING APPLICATIONS DUE TO ITS HIGH BREAKDOWN VOLTAGE, RELATIVELY LARGE BAND GAP, HIGH THERMAL CONDUCTIVITY AND HIGH MELTING POINT. USE OF SILICON CARBIDE THIN FILMS IS HAMPERED, HOWEVER, BY THE INABILITY TO REPRODUCIB ...
SBIR Phase II 1993 Department of DefenseMissile Defense Agency -
Negative Electron Affinity Diamond Vacuum Collector Transistor
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMAN ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride
SBC: Advanced Technologies/Laboratories Intl Topic: N/ATITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Silicon-Carbide, High-Resolution, Room-Temperature X-Ray Detector
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1993 National Aeronautics and Space Administration -
Dielectric Isolation for Silicon Carbide
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1993 National Aeronautics and Space Administration -
Doped Silicide OHMIC Contacts To Silicon Carbide
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
DIAMOND COLD CATHODES FOR FLAT PANEL DISPLAYS
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase II 1993 Department of DefenseMissile Defense Agency -
Molecular-Level Matrix Inhibitions in Carbon-Carbon Composites
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1993 National Aeronautics and Space Administration -
Ferroelectric Capacitors for Pulse Power Electronics
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1993 Department of DefenseMissile Defense Agency