Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Ultra Narrowband Optical Parametric Oscillator

    SBC: Aculight Corporation            Topic: N/A

    Presently there are no broadly tenable, narrow linewidth souces that operate throughout the mid-infrared (mid-IR) region of the spectrum, from 1 to 5 microns. Traditional sources have very low spectral brightness (low power per unit spectral bandwidth). This proposal describes a novel approach to produce a source with very high spectral brightness, tunable over the range of 1.1 to 4.3 microns. ...

    SBIR Phase II 1998 Department of DefenseAir Force
  2. Solid State Seed Laser for COIL

    SBC: Aculight Corporation            Topic: N/A

    The Air Force Phillips Laboratory is seeking approaches for demonstrating frequency agile COIL (chemical oxygen iodine lasers) operating near 1.31 microns and at 10 kHz rep rates. Frequency conversion approaches must be capable of handling high average power levels, greater than 10 kWatts. Converting a COIL device to high peak powers will be necessary for frequency conversion. The approach prop ...

    SBIR Phase II 1998 Department of DefenseAir Force
  3. Low-cost, high brightness, wavelength-selectable laser transmitter

    SBC: Aculight Corporation            Topic: N/A

    For future long-range theater ballistic missile defense, aircraft-mounted LADAR systems require eyesafe laser transmitters that produce higher pulse energy and better beam quality than currently available optical parametric oscillators (OPOs) pumped by diode-pumped Nd:YAG lasers. Aculight proposes a novel laser transmitter approach that can simultaneously generate the required pulse energy, b ...

    SBIR Phase II 1998 Department of DefenseNavy
  4. Advanced Diode Pumped Laser Packaging

    SBC: Aculight Corporation            Topic: N/A

    High power lasers are needed for many airborne applications. These lasers must be compact, reliable in high vibration environments, and must also have a low per unit cost. Aculight proposes to develop a high repetition rate laser with average power of 10-20 watts using novel packaging designs and manufacturing methods. When fully developed, this technology will provide flight-worthy lasers at a ...

    SBIR Phase I 1998 Department of DefenseAir Force
  5. High Brightness, Multi-Wavelength Semiconductor Lasers

    SBC: Aculight Corporation            Topic: N/A

    Improving the optical beam brightness of diode laser bars and optically pumped semiconductors is essential for many Air Force and commercial applications. In this proposed work Aculight will build and test a MIT/LL optical approach for decreasing the angular divergence of diode laser bars by a factor of at least 80. The MIT/LL approach will be implemented using Aculight's newly developed optical ...

    SBIR Phase I 1998 Department of DefenseAir Force
  6. Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  7. Interconnect Technology for High Temperature SiC Integrated Circuits

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...

    SBIR Phase II 1998 Department of DefenseAir Force
  8. High Temperature III-V Nitride RF Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications ...

    SBIR Phase II 1998 Department of DefenseAir Force
  9. Novel Polishing and Reactor Technologies for SiC Epitaxial Growth

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  10. HIGH TEMPERATURE INTEGRATED CAPACITORS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Next generation power electronic systems for military aircraft will require capacitors with reliable performance at temperatures from -55 up to 300 degrees C and beyond for filters, power converters and other control circuitry. Thin film integrated passive devices with lower dissipation and electrical leakage will also be needed, especially at high frequencies. Thin films have inherently high bre ...

    SBIR Phase I 1998 Department of DefenseAir Force
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