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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. HIGH TEMPERATURE SUPERCONDUCTORS WITH IMPROVED CURRENT DENSITIES

    SBC: Cryopower Associates, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency
  2. SIDEBAND SUPPRESSION IN HIGH POWER FREE ELECTRON LASERS

    SBC: MISSION RESEARCH CORP.            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency
  3. MICROSTACK INSULATOR FOR HIGH VOLTAGE PULSED SYSTEMS

    SBC: Tetra Corporation            Topic: N/A

    POLYMERIC OR CERAMIC INSULATORS CONVENTIONALLY ARE BEING USED IN HIGH VOLTAGE PULSED SYSTEMS. NEW APPROACHES ARE NEEDED THAT WOULD REDUCE INSULATORS RING THICKNESSES AND INCREASE CORRESPONDING GRADING RINGS FLASHOVER VOLTAGE. SUCH AN APPROACH WOULD POSSESS IN COMPARISON TO CONVENTIONAL INSULATORS: HIGHER SURFACE FLASHOVER FIELD STRENGTH; SMALLER PHYSICAL DIMENSIONS FOR EQUIVALENT VOLTAGE HOLDOFF; ...

    SBIR Phase II 1989 Department of DefenseMissile Defense Agency
  4. HIGH POWER LOW IMPEDANCE LIGHT WEIGHT TRANSMISSION LINES

    SBC: Tetra Corporation            Topic: N/A

    THE DEVELOPMENT OF HIGH POWER, LOW IMPEDANCE, LIGHTWEIGHT ENERGY STORAGE TRANSMISSION LINES FOR PULSE-POWER APPLICATIONS IS CRUCIAL FORSMALLER, LIGHTWEIGHT, SPACE-BASED, PULSE-POWER SYSTEMS. DEVELOPMENT OF HIGH DIELECTRIC ENERGY STORAGE LINE TECHNOLOGY WOULD GREATLY REDUCETHE SIZE, WEIGHT, AND COMPLEXITY OF PULSE POWER SYSTEMS UTILIZING THESE TYPES OF COMPONENTS. EFFICIENT TRANSPORT OF 400KV, 100K ...

    SBIR Phase II 1989 Department of DefenseMissile Defense Agency
  5. PLASMA CATHODE FOR HIGH POWER PHOTOIONIZED LASERS AND PLASMA SWITCHES

    SBC: Tetra Corporation            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency
  6. MEGAVOLT MEGAHERTZ PULSE GENERATOR TECHNOLOGY

    SBC: Tetra Corporation            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency
  7. SURFACE-EMITTING LASER LOGIC FOR DIGITAL OPTICAL COMPUTING

    SBC: Photonics Research, Inc.            Topic: N/A

    DIGITAL OPTICAL COMPUTING HAS EVOLVED TO THE POINT WHERE VIABLE ARCHITECTURES HAVE BEEN DESCRIBED IN DETAIL. HUNDREDS OF PAPERS ARE PUBLISHED AND SEVERAL TOPICAL CONFERENCES ARE HELD ANNUALLY ON THE SUBJECT. HOWEVER, FEW DEMONSTRATIONS HAVE BEEN REPORTED OF ACTUAL OPERATING SYSTEMS DUE TO THE UNAVAILABILITY OF AN "IDEAL" OPTICAL LOGIC GATE HAVING: OPTICAL GAIN, CASCADABILITY, HIGH ON/OFF CONTRAST, ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency
  8. Rapid Fabrication of Precise SiC Mirror Substrates

    SBC: Sandia Systems, Inc.            Topic: N/A

    Sandia Systems, Inc. will apply novel processing techniques to demonstrate an improved fabrication process for SiC optical elements. We will combine the CVD of SiC replication process and ion beam figuring process to demonstrate fabrication of high quality optical elements. The CVD SiC would have no subsurface damage layer, and this would alleviate many of the materials problems associated with pr ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  9. PLASMA CATHODE FOR HIGH POWER PHOTOIONIZED LASERS AND PLASMA SWITCHES

    SBC: Tetra Corporation            Topic: N/A

    EFFICIENCY OF HIGH POWER UV-PHOTOIONIZED EXCIMER AND CO2 LASERS HAVE BEEN LIMITED BY THE POWER CONSUMED IN THE PHOTOIONIZED SOURCE. THE USE OF SCREEN CATHODES PRESENTS THE PROBLEM OF MECHANICAL STRENGTH. SCREEN CATHODES MADE OUT OF WIRE MESH ARE EXCELLENT LIGHT TRANSMITTERS BUT LACK MECHANICAL STRENGTH, NOT TO MENTION THAT THEY CAN BE DESTROYED BY ARCING. CATHODES MADE OUT OF PERFORATED ALUMINUM O ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency
  10. TACITRON SWITCH FOR THERMIONIC REACTOR POWER CONDITIONING

    SBC: Tetra Corporation            Topic: N/A

    THE TACITRON IS A HIGH TEMPERATURE (300 - 1500 DEGREES C) SWITCH THAT CAN SWITCH HIGH CURRENTS (>10'S OF AMPERES PER SQUARE CM OF SWITCH ELECTRODE AREA) AND HIGH VOLTAGES (>200 VOLTS) AT SWITCHING SPEEDS IN THE 10'S TO 100'S OF KILOHERTZ. THIS SWITCH IS FULLY CONTROLLABLE SO IT CAN PERFORM THE SAME FUNCTIONS AS MANY OF THE SEMICONDUCTOR DEVICES (TRANSISTORS, DIODES, THYRISTORS) EXCEPT THAT THE TAC ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency

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