List

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. High Faraday Rotation Optical Waveguides for Application in Optical Circulators for Telecommunications

    SBC: Nomadics, Inc.            Topic: N/A

    The fabrication of highly efficient Faraday-active optical waveguide structures is proposed. Faraday-active waveguides are presently of great interest as their development is the critical enabling technology associated with the demonstration of an all-fiber optical circulator. Such devices, which may be characterized as multiport nonreciprocal polarization rotators, provide a means by which the te ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  2. Terahertz Time Domain Spectroscopy: An novel approach for finding cracks in composite materials

    SBC: Nomadics, Inc.            Topic: N/A

    The utilization of composite materials is vital in achieving the objectives of our nation's missile defense programs. However, composite materials can develop micro-cracking and other flaws that are difficult to detect. The need fornon-destructive-testing (NDT) and evaluation (NDE) of composite materials is critically important as structural integrity must be monitored in missile systems while at ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  3. Advanced Infrared (IR) Sensor Components for Missile Defense

    SBC: Nanolight, Inc.            Topic: MDA06T011

    The objective of this proposal is to further explore PbSnSe detector array on Si substrate. Two approaches are proposed. One is a zero-risk incremental advance that employs a new growth condition to reduce the dislocation density. Another approach is a novel fabrication technique with high-risk but it could enable revolutionary rather than evolutionary advances. IV-VI semiconductors such as Pb1-x ...

    STTR Phase I 2006 Department of DefenseMissile Defense Agency
  4. Advanced Infrared (IR) Sensor Components for Missile Defense

    SBC: Nanolight, Inc.            Topic: MDA06T011

    The objective of this proposal is to further develop IV-VI PbSnSe detectors epitaxially grown on Si substrates. The motivation of fabricating IV-VI detector arrays on Si is based on the following advantages of IV-VI Pb-salt semiconductors. (1) The large dielectric constant helps screen and localize the defect related effects. (2) The epitaxial material on Si is highly uniform, and thus the cutoff ...

    STTR Phase II 2007 Department of DefenseMissile Defense Agency
  5. Passivation Technologies for Improved Operability and Radiation Tolerance in VLWIR HgCdTe Focal Plane Arrays

    SBC: AMETHYST RESEARCH INCORPORATED            Topic: MDA06025

    HgCdTe, with its high quantum efficiency, remains the material of choice for most high-performance infrared detector applications. By varying its alloy composition, HgCdTe can be used for short wavelength to very long wavelength infrared (VLWIR); however, its use in VLWIR (12-16 microns) applications is problematic, even when grown on lattice-matched CdZnTe substrates, due to material and substrat ...

    SBIR Phase I 2007 Department of DefenseMissile Defense Agency
  6. Passivation Technologies for Improved Operability in HgCdTe Focal Plane Arrays

    SBC: AMETHYST RESEARCH INCORPORATED            Topic: MDA06025

    High-performance infrared detectors are mission-critical components of each layer of the Ballistic Missile Defense System. MDA is investing heavily in technologies that enhance producibility/operability of LWIR/VLWIR infrared focal plane arrays (FPAs), and reduce BMDS life cycle costs. HgCdTe is clearly the material of choice for these IRFPAs, but presents numerous challenges, including trap-assis ...

    SBIR Phase II 2008 Department of DefenseMissile Defense Agency
  7. Defect Mapping of Wafers for Increasing Yield and Operability of Infrared Focal Plane Arrays

    SBC: AMETHYST RESEARCH INCORPORATED            Topic: MDA07026

    The yield and operability of high performance infrared detectors, particularly those based on HgCdTe, are severely compromised by materials defects. Recently, ARI has demonstrated during its UV hydrogenation process that deuterium effectively ‘decorates’ defects in materials such as ZnCdTe and HgCdTe. In essence, the distribution of deuterium in the sample directly ‘maps’ defects in the ...

    SBIR Phase I 2008 Department of DefenseMissile Defense Agency
  8. Defect Mapping of Wafers for Increasing Yield and Operability of Infrared Focal Plane Arrays

    SBC: AMETHYST RESEARCH INCORPORATED            Topic: MDA07026

    Yields and operability of high performance infrared focal plane arrays (IRFPAs), particularly those fabricated in HgCdTe, are severely impacted by material defects introduced during growth and/or processing. Amethyst Wafer Mapping (AWM) is a materials characterization technology which when fully developed will provide FPA manufacturers a critical new tool with which to effect remediation or elimi ...

    SBIR Phase II 2009 Department of DefenseMissile Defense Agency
  9. The Use of Hydrogen for Defect Reduction in Large Format Infrared Detector Materials

    SBC: AMETHYST RESEARCH INCORPORATED            Topic: MDA11T002

    Active defects negatively impact the performance of IRFPAs by increasing noise at various levels up to, and including, catastrophic degradation. Evidence indicates that"killer defects"are related to the interaction of open core screw dislocations with impurities that remain after substrate preparation, prior to HgCdTe growth. This impurity diffusion creates a conducting channel that shorts the j ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  10. High Operability HgCdTe Focal Plane Arrays on Si by Mitigation of Defects

    SBC: AMETHYST RESEARCH INCORPORATED            Topic: MDA11T002

    For HgCdTe infrared focal plane arrays fabricated on Si substrates, a model has recently been proposed to account for the disparity between the density of failed pixels and the density of dislocations that are present in the HgCdTe junction region. The model distinguishes between active and inactive dislocations and offers a hypothesis that dislocations are active only when they intersect particul ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government