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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Microscopic Power Supplies for Remote, Autonomous Sensors and Other MEMS Devices
SBC: BIPOLAR TECHNOLOGIES Topic: N/AN/A
SBIR Phase I 1999 Department of DefenseMissile Defense Agency -
Non-Precious Metal Macrocyclic Catalysts for O2-Reduction in PEM Fuel Cells
SBC: BIPOLAR TECHNOLOGIES Topic: N/AN/A
SBIR Phase I 1999 Department of DefenseMissile Defense Agency -
Advanced, Lightweight, SiC(fiber)-Toughened NZP Matrix Composites
SBC: VESTA SCIENCES, INC. Topic: N/AN/A
SBIR Phase I 1999 Department of DefenseMissile Defense Agency -
N/A
SBC: PROCESS INSTRUMENTS, INC. Topic: N/AN/A
SBIR Phase II 1999 Department of DefenseMissile Defense Agency -
High-Temperature, Lightweight, Rad-Hard Silicon Carbide (SiC) DC/DC Converters for Missile Defense Satellite Power Management and Distribution Systems
SBC: Arkansas Power Electronics International, Inc. Topic: MDA06017Power electronic converters are essential in every MDA vehicle, with use in critical systems ranging from electric power management applications, to power distribution, to on-board servo motor/actuator drivers. Advancing state-of-the-art power electronics technologies through the use of SiC semiconductors will produce significant savings across the board in almost all areas of MDA power management ...
SBIR Phase I 2007 Department of DefenseMissile Defense Agency -
Advanced Infrared (IR) Sensor Components for Missile Defense
SBC: NANO LIGHT Topic: MDA06T011The objective of this proposal is to further develop IV-VI PbSnSe detectors epitaxially grown on Si substrates. The motivation of fabricating IV-VI detector arrays on Si is based on the following advantages of IV-VI Pb-salt semiconductors. (1) The large dielectric constant helps screen and localize the defect related effects. (2) The epitaxial material on Si is highly uniform, and thus the cutoff ...
STTR Phase II 2007 Department of DefenseMissile Defense Agency -
Passivation Technologies for Improved Operability and Radiation Tolerance in VLWIR HgCdTe Focal Plane Arrays
SBC: AMETHYST RESEARCH INC Topic: MDA06025HgCdTe, with its high quantum efficiency, remains the material of choice for most high-performance infrared detector applications. By varying its alloy composition, HgCdTe can be used for short wavelength to very long wavelength infrared (VLWIR); however, its use in VLWIR (12-16 microns) applications is problematic, even when grown on lattice-matched CdZnTe substrates, due to material and substrat ...
SBIR Phase I 2007 Department of DefenseMissile Defense Agency