The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.
High-Temperature, Lightweight, Rad-Hard Silicon Carbide (SiC) DC/DC Converters for Missile Defense Satellite Power Management and Distribution SystemsSBC: Arkansas Power Electronics International, Inc. Topic: MDA06017
Power electronic converters are essential in every MDA vehicle, with use in critical systems ranging from electric power management applications, to power distribution, to on-board servo motor/actuator drivers. Advancing state-of-the-art power electronics technologies through the use of SiC semiconductors will produce significant savings across the board in almost all areas of MDA power management ...SBIR Phase I 2007 Department of DefenseMissile Defense Agency
SBC: Nanolight, Inc. Topic: MDA06T011
The objective of this proposal is to further develop IV-VI PbSnSe detectors epitaxially grown on Si substrates. The motivation of fabricating IV-VI detector arrays on Si is based on the following advantages of IV-VI Pb-salt semiconductors. (1) The large dielectric constant helps screen and localize the defect related effects. (2) The epitaxial material on Si is highly uniform, and thus the cutoff ...STTR Phase II 2007 Department of DefenseMissile Defense Agency
Passivation Technologies for Improved Operability and Radiation Tolerance in VLWIR HgCdTe Focal Plane ArraysSBC: AMETHYST RESEARCH INCORPORATED Topic: MDA06025
HgCdTe, with its high quantum efficiency, remains the material of choice for most high-performance infrared detector applications. By varying its alloy composition, HgCdTe can be used for short wavelength to very long wavelength infrared (VLWIR); however, its use in VLWIR (12-16 microns) applications is problematic, even when grown on lattice-matched CdZnTe substrates, due to material and substrat ...SBIR Phase I 2007 Department of DefenseMissile Defense Agency