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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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High-Temperature, Lightweight, Rad-Hard Silicon Carbide (SiC) DC/DC Converters for Missile Defense Satellite Power Management and Distribution Systems
SBC: Arkansas Power Electronics International, Inc. Topic: MDA06017Power electronic converters are essential in every MDA vehicle, with use in critical systems ranging from electric power management applications, to power distribution, to on-board servo motor/actuator drivers. Advancing state-of-the-art power electronics technologies through the use of SiC semiconductors will produce significant savings across the board in almost all areas of MDA power management ...
SBIR Phase I 2007 Department of DefenseMissile Defense Agency -
Automated Battle Management / Planning Aids
SBC: SONALYSTS INC Topic: MDA06007The United States missile defense capability is expanding rapidly. As the number of interceptors, types, and locations increase to defend against growing threats, so does the complexity of defense. Development of automated allocation of assets to threats is a critical technology to save lives and to efficiently utilize scarce assets (save money) in the event of an actual launch. This automated a ...
SBIR Phase I 2007 Department of DefenseMissile Defense Agency -
A Phase I SBIR Proposal to Lower the Cost and Improve the Manufacturing of Li-ion Batteries
SBC: Yardney Technical Products, Inc. Topic: MDA06026Lithium-ion (Li-ion) batteries are attractive candidates for use as power sources in military, aerospace, commercial, and vehicular applications because they have high specific energy (up to 200 Wh/kg) and energy density (~ 500 Wh/L) and long cycle life (1,000 – 80,000 cycles currently depending on the depth of cycling). However, the production of these batteries for defense applications is ofte ...
SBIR Phase I 2007 Department of DefenseMissile Defense Agency -
PhaCTIV- Phase Change Thermally Initialted Venting System
SBC: Zatorski Coating Company, Inc. Topic: MDA06036PhaCTIV - Phase Change Thermally Initiated Venting System The Phase Change Thermally Initiated Venting System (PhaCTIV) consists of the following: 1) A structual plate (external) - low melt alloy - structual plate - thermal barrier (internal). 2) Structural plates are joined together with low-melt alloy having an operating range of 230°C to greater than 480°C, depending on requirements. 3) Therm ...
SBIR Phase I 2007 Department of DefenseMissile Defense Agency -
BIMETALLIC PRECURSORS FOR CHEMICAL VAPOR DEPOSITION
SBC: Advanced Technologies/Laboratories Intl Topic: N/ATHE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS PROCESSING SHARES MANY COMMON FEATURES WITH WELL-ESTABLISHED SILICON PROCESSING. TECHNOLOGY HAS BEEN DEMONSTRATED FOR PRODUCING OHMIC AND SCHO ...
SBIR Phase II 1993 Department of DefenseMissile Defense Agency -
HIGH CONDUCTIVITY SILICON CARBIDE SUBSTRATES
SBC: Advanced Technologies/Laboratories Intl Topic: N/AHIGH POWER AND HIGH TEMPERATURE ELECTRONIC DEVICES ARE IMPORTANT IN BOTH DEFENSE AND COMMERCIAL SYSTEMS. BETA SILICON CARBIDE IS AN EXCELLENT CANDIDATE SEMICONDUCTOR MATERIAL FOR DEMANDING APPLICATIONS DUE TO ITS HIGH BREAKDOWN VOLTAGE, RELATIVELY LARGE BAND GAP, HIGH THERMAL CONDUCTIVITY AND HIGH MELTING POINT. USE OF SILICON CARBIDE THIN FILMS IS HAMPERED, HOWEVER, BY THE INABILITY TO REPRODUCIB ...
SBIR Phase II 1993 Department of DefenseMissile Defense Agency -
Negative Electron Affinity Diamond Vacuum Collector Transistor
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMAN ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride
SBC: Advanced Technologies/Laboratories Intl Topic: N/ATITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Doped Silicide OHMIC Contacts To Silicon Carbide
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
DIAMOND COLD CATHODES FOR FLAT PANEL DISPLAYS
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase II 1993 Department of DefenseMissile Defense Agency