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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 1 - 10 of 57 results
 
  • Record 1 TO 57

  1. HIGH TEMPERATURE SUPERCONDUCTORS WITH IMPROVED CURRENT DENSITIES

    SBC: Cryopower Associates, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency

  2. HIGH POWER SHORT PULSE BATTERY/CAPACITOR

    SBC: ERNEST MEADOWS INDUSTRIAL DESIGN            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency

  3. SIDEBAND SUPPRESSION IN HIGH POWER FREE ELECTRON LASERS

    SBC: MISSION RESEARCH CORP.            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency

  4. MICROSTACK INSULATOR FOR HIGH VOLTAGE PULSED SYSTEMS

    SBC: Tetra Corporation            Topic: N/A

    POLYMERIC OR CERAMIC INSULATORS CONVENTIONALLY ARE BEING USED IN HIGH VOLTAGE PULSED SYSTEMS. NEW APPROACHES ARE NEEDED THAT WOULD REDUCE INSULATORS RING THICKNESSES AND INCREASE CORRESPONDING GRADING RINGS FLASHOVER VOLTAGE. SUCH AN APPROACH WOULD POSSESS IN COMPARISON TO CONVENTIONAL INSULATORS: HIGHER SURFACE FLASHOVER FIELD STRENGTH; SMALLER PHYSICAL DIMENSIONS FOR EQUIVALENT VOLTAGE HOLDOFF; ...

    SBIR Phase II 1989 Department of DefenseMissile Defense Agency

  5. HIGH POWER LOW IMPEDANCE LIGHT WEIGHT TRANSMISSION LINES

    SBC: Tetra Corporation            Topic: N/A

    THE DEVELOPMENT OF HIGH POWER, LOW IMPEDANCE, LIGHTWEIGHT ENERGY STORAGE TRANSMISSION LINES FOR PULSE-POWER APPLICATIONS IS CRUCIAL FORSMALLER, LIGHTWEIGHT, SPACE-BASED, PULSE-POWER SYSTEMS. DEVELOPMENT OF HIGH DIELECTRIC ENERGY STORAGE LINE TECHNOLOGY WOULD GREATLY REDUCETHE SIZE, WEIGHT, AND COMPLEXITY OF PULSE POWER SYSTEMS UTILIZING THESE TYPES OF COMPONENTS. EFFICIENT TRANSPORT OF 400KV, 100K ...

    SBIR Phase II 1989 Department of DefenseMissile Defense Agency

  6. PLASMA CATHODE FOR HIGH POWER PHOTOIONIZED LASERS AND PLASMA SWITCHES

    SBC: Tetra Corporation            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency

  7. MEGAVOLT MEGAHERTZ PULSE GENERATOR TECHNOLOGY

    SBC: Tetra Corporation            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency

  8. 128X128 ELEMENT MONOLITHIC DUAL BAND HGCDTE STARING ARRAYS

    SBC: ADVANCED DEVICE TECHNOLOGY, INC.            Topic: N/A

    MISSILE SEEKERS MUST DETECT TARGETS IN DUAL BANDS (3-5 UM AND 8-12 UM). THEY NOW USE HYBRID ASSEMBLY OF TWO SEPARATE ARRAYS, WHICH INCREASES THE POWER, CONSUMPTION, THE WEIGHT, AND THE COST. WE WILL DEVELOP MONOLITIHIC DUAL BAND 128X128 STARING ARRAYS ON HGCDTE MATERIAL. THE INNOVATION IS THE DETECTION OF BOTH LONG AND SHORT WAVE SIGNALS IN THE SAME PIXEL SIMULTANEOUSLY. FABRICATION METHODS ARE DE ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency

  9. VERTICAL CAVITY SURFACE EMITTING LASER MODULES FOR OPTICAL COMMUNICATION AND SIGNAL PROCESSING

    SBC: Apa Optics, Inc.            Topic: N/A

    VERTICAL CAVITY SURFACE EMITTING LASERS ARE UNDER DEVELOPMENT AT SEVERAL U.S. LABS WHICH CONSIST OF A GAAS/ALGAAS QUANTUM WELL FABRY-PEROT CAVITY SANDWICHED BETWEEN N AND P DOPED HIGH REFLECTIVITY SEMICONDUCTOR MIRRORS (GAAS/ALGAAS QUARTER WAVE STACKS). OUR PHASE I RESEARCH PROVES THE FEASIBLITY OF UNIQUE APPROACH TO THE ELECTRIC ADDRESSABILITY OF THESE SURFACE EMITTING LASERS. FOR ADDRESSING A (M ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency

  10. GaAs/GaN Strained Layer Superlattice Material for High Temperature Transistors

    SBC: Apa Optics, Inc.            Topic: N/A

    Electronic devices which operate at high temperatures could be used in many military and commercial systems. GaAs and Si based devices cannot operate at these temperatures and require cooling. Wide bandgap material such as diamond, SiC and GaN have greater breakdown voltages, higher operating temperatures, and higher saturated electron velocities than either GaAs or Si. However, these material sys ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
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