Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. CRYOCOOLER FOR HIGH ACCELERATION SYSTEMS

    SBC: Alabama Cryogenic Engineering, Inc.            Topic: N/A

    A CRYOCOOLER CAPABLE OF OPERATING UNDER EXTREMELY HIGH ACCELERATION LEVELS IS PROPOSED. THE CRYOCOOLER USES THE LINDE-HAMPSON CYCLE, AND CAN REACH APPROXIMATELY 80 KELVIN. MULTI-STAGE UNITS, TO REACH LOWER TEMPERATURES, ARE ALSO POSSIBLE.

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  2. MICROCRYSTALLITE TITANIUM DISULFIDE CATHODES FOR PULSE POWER

    SBC: COVALENT ASSOC., INC.            Topic: N/A

    RECHARGEABLE POWER SOURCES POSSESSING HIGH ENERGY DENSITIES, BRIEF BUTREPETITIVE HIGH CURRENT OUTPUTS, AND THOUSANDS OF DUTY CYCLES ARE REQUIRED FOR STRATEGIC DEFENSE SYSTEMS. TO ADDRESS THESE NEEDS, HIGH SURFACE AREA, THIN FILM CATHODES ARE BEING FABRICATED FOR AMBIENT TEMPERATURE LITHIUM BATTERIES. THESE CATHODES FEATURE AN ARRAY OF APPROXIMATELY L MICROMETER MICROCRYSTALLITE TIS2 PLATES ORIENTE ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  3. FAST ELECTROCHROMIC SWITCHING FOR OPTICAL HARDENING APPLICATIONS

    SBC: EIC LABORATORIES, INC.            Topic: N/A

    A PROGRAM TO DEVELOP ELECTROCHROMIC DEVICES CAPABLE OF FAST TRANSMISSIVE TO REFLECTIVE OPTICAL SWITCHING IS PROPOSED. THESE DEVICES WOULD BE USED FOR OPTICAL HARDENING IN THE WAVELENGTH RANGE FROM 0.615 MICROMWTERS. OPTICAL SWITCHING ELEMENTS BASED ON SINGLE CRYSTAL LAYERS OR EPITAXIAL FILMS OF THE METAL DICHALOCOGENIDES ZRS(2) AND HF(2) WOULD BE DEVELOPED. WE PROPOSE TO INTERCALATE SINGLE CRYSTAL ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  4. SURFACE MORPHOLOGY OF SILICON ON INSULATOR FILMS PREPARED BY ZONE-MELTING RECRYSTALLIZATION

    SBC: Kopin Corporation            Topic: N/A

    RESEARCH IS DIRECTED AT TECHNIQUES TO IMPROVE SURFACE MORPHOLOGY IN SILICON ON INSULATOR (SOI) WAFERS PREPARED BY ZONE MELTING RECRYSTALLIZATION (ZMR). THE THREE AREAS OF PRIMARY IMPORTANCE IN IMPROVING THE SURFACE MORPHOLOGY OF ZMR PROCESSED WAFERS ARE: SLIP, BOW AND WARP, AND SURFACE SMOOTHNESS. SLIP IS CAUSED BY THERMALLY INDUCED STRESS THAT RESULTS FROM THE TEMPERATURE GRADIENT IN THE MELT ZON ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  5. DUAL SUSCEPTOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION FOR PRODUCTION OF HETEROSTRUCTURE MATERIALS

    SBC: Kopin Corporation            Topic: N/A

    A PRODUCTION ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR IS BEINGDESIGNED CAPABLE OF DEPOSITING UNIFORM AND ABRUPT LAYERS OF GAAS AND ALGAAS FOR THE NEXT GENERATION OF HETEROSTRUCTURE DEVICES. THESE INCLUDE HIGH ELECTRON MOBILITY STRUCTURES FOR BOTH DIGITAL AND MONOLITHIC MICROWAVE INTEGRATED CIRCUITS, AS WELL AS QUANTUM WELL STRUCTURES FOR OPTICAL COMMUNICATION. THIS DESIGN IS ANTICIPATED TO ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  6. KINETIC ENERGY WEAPONS

    SBC: Nichols Research Corp            Topic: N/A

    THE ACQUISITION OF POST BOOST PHASE VEHICLES AND/OR INDIVIDUAL REENTRY VEHICLES BY AN INFRARED SENSOR ON BOARD A SMALL G HARDENED PROJECTILE WHICH SUBSEQUENTLY HOMES ON AND IMPACTS ITS TARGET OFFERS AN ATTRACTIVE APPROACH FOR REENTRY VEHICLE KINETIC ENERGY KILL. THE ACQUISITION, TRACKING, DISCRIMINATION AND GUIDANCE FUNCTIONS REQUIRED OF SUCH AN IR SENSOR RESULT IN A NUMBER OF CRITICAL ISSUES. THE ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  7. HIGH RESOLUTION HIGH SPEED BISTABLE OPTICAL DEVICE FOR OPTICAL COMPUTING APPLICATIONS

    SBC: Optron Systems, Inc.            Topic: N/A

    OPTICAL COMPUTERS ARE RECOGNIZED AS POTENTIALLY USEFUL ELEMENTS IN THE QUEST TO MEET THE INTENSE BATTLE MANAGEMENT COMPUTATIONAL REQUIREMENTS OF THE SDI PROGRAM. CURRENTLY, OPTICAL COMPUTERS ARE GREATLY LIMITED IN PERFORMANCE BECAUSE NO EXISTING NONLINEAR LIGHT MODULATION DEVICE SIMULTANEOUSLY OFFERS FAST OPTICAL SWITCHING WITH HIGH GAMMA (THRESHOLD), HIGH SPATIAL BANDWIDTH, LOW POWER DISSIPATION, ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  8. INTENSIFIED BISTABLE OPTICAL DEVICE

    SBC: Optron Systems, Inc.            Topic: N/A

    OPTICAL COMPUTERS ARE RECOGNIZED AS POTENTIALLY USEFUL ELEMENTS IN THEQUEST TO MEET THE INTENSE BATTLE MANAGEMENT COMPUTATIONAL REQUIREMENTSOF STRATEGIC DEFENSE. CURRENTLY, OPTICAL COMPUTERS ARE GREATLY LIMITED IN PERFORMANCE BECAUSE NO EXISTING NONLINEAR LIGHT MODULATION DEVICE SIMULTANEOUSLY OFFERS FAST OPTICAL SWITCHING WITH THRESHOLD HIGH GAMMA, HIGH SPATIAL BANDWIDTH, LOW POWER DISSIPATION, O ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  9. DEPOSITION OR INP ON SI SUBSTRATES FOR MONOLITHIC INTEGRATION OF ADVANCED ELECTRONICS

    SBC: Spire Corporation            Topic: N/A

    A PROCESS IS BEING DEVELOPED FOR THE HETEROEPITAXIAL GROWTH OF INP ON SILICON SUBSTRATES BY METALORGANIC CHEMICAL VAPOR DEPOSITION. DUE TO ITS ELECTRON SATURATED DRIFT VELOCITY AND RADIATION RESISTANCE, INP ISAN EXCELLENT MATERIAL FOR USE IN HIGH SPEED ELECTRON DEVICES AND SPACEAPPLICATIONS. SILICON IS AN OPTIMAL SUBSTRATE MATERIAL DUE TO THE AVAILABILITY OF HIGH PURITY, LARGE AREA, LOW COST WAFER ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  10. HIGH REPETITION RATE GLOW DISCHARGE CLOSING SWITCH DEVELOPMENT PROGRAM

    SBC: Tetra Corporation            Topic: N/A

    THE DEVELOPMENT OF HIGH POWER, HIGH REPETITION RATE CLOSING SWITCHES HAS RECENTLY BECOME IMPORTANT FOR MANY PULSED POWER APPLICATIONS. HISTORICALLY, HIGH REPETITION RATE SWITCHES FOR PULSED POWER APPLICATIONS HAVE EITHER BEEN SPARK GAPS OR THYRATRONS. THYRATRONS HAVE HIGH REPETITION RATES, BUT ARE LIMITED TO LOW VOLTAGES AND LOW CURRENT. CONVERSELY, SPARK GAPS CAN CARRY HIGH CURRENTS AND STAND-OFF ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
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