Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. CRYOCOOLER FOR HIGH ACCELERATION SYSTEMS

    SBC: Alabama Cryogenic Engineering, Inc.            Topic: N/A

    A CRYOCOOLER CAPABLE OF OPERATING UNDER EXTREMELY HIGH ACCELERATION LEVELS IS PROPOSED. THE CRYOCOOLER USES THE LINDE-HAMPSON CYCLE, AND CAN REACH APPROXIMATELY 80 KELVIN. MULTI-STAGE UNITS, TO REACH LOWER TEMPERATURES, ARE ALSO POSSIBLE.

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  2. KINETIC ENERGY WEAPONS

    SBC: Nichols Research Corp            Topic: N/A

    THE ACQUISITION OF POST BOOST PHASE VEHICLES AND/OR INDIVIDUAL REENTRY VEHICLES BY AN INFRARED SENSOR ON BOARD A SMALL G HARDENED PROJECTILE WHICH SUBSEQUENTLY HOMES ON AND IMPACTS ITS TARGET OFFERS AN ATTRACTIVE APPROACH FOR REENTRY VEHICLE KINETIC ENERGY KILL. THE ACQUISITION, TRACKING, DISCRIMINATION AND GUIDANCE FUNCTIONS REQUIRED OF SUCH AN IR SENSOR RESULT IN A NUMBER OF CRITICAL ISSUES. THE ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  3. HIGH REPETITION RATE GLOW DISCHARGE CLOSING SWITCH DEVELOPMENT PROGRAM

    SBC: Tetra Corporation            Topic: N/A

    THE DEVELOPMENT OF HIGH POWER, HIGH REPETITION RATE CLOSING SWITCHES HAS RECENTLY BECOME IMPORTANT FOR MANY PULSED POWER APPLICATIONS. HISTORICALLY, HIGH REPETITION RATE SWITCHES FOR PULSED POWER APPLICATIONS HAVE EITHER BEEN SPARK GAPS OR THYRATRONS. THYRATRONS HAVE HIGH REPETITION RATES, BUT ARE LIMITED TO LOW VOLTAGES AND LOW CURRENT. CONVERSELY, SPARK GAPS CAN CARRY HIGH CURRENTS AND STAND-OFF ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  4. ENHANCED ELF COMPUTER CODES DEVELOPMENT

    SBC: Tetra Corporation            Topic: N/A

    MANY OF THE SYSTEMS FOR SDI INVOLVE PULSE POWER AND HIGH VOLTAGE SYSTEMS, INCLUDING LASERS, PARTICLE BEAM ACCELERATORS, AND RAILGUNS. ONE OF THE SIGNIFICANT PROBLEMS YET TO BE SOLVED IN DEVELOPING OPERATIONAL SDI SPACECRAFT IS THE MANAGEMENT OF ELECTRIC FIELDS WITHIN THE SPACECRAFT, THE PRIMARY WEAPON SYSTEM, AND ITS POWER SUPPLY AND CONDITIONING EQUIPMENT. THE ELF CODES UNIQUELY HAVE THE ABILITY ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  5. MICROSTACK INSULATOR FOR HIGH VOLTAGE PULSED SYSTEMS

    SBC: Tetra Corporation            Topic: N/A

    POLYMERIC OR CERAMIC INSULATORS CONVENTIONALLY ARE BEING USED IN HIGH VOLTAGE PULSED SYSTEMS. NEW APPROACHES ARE NEEDED THAT WOULD REDUCE INSULATORS RING THICKNESSES AND INCREASE CORRESPONDING GRADING RINGS FLASHOVER VOLTAGE. SUCH AN APPROACH WOULD POSSESS IN COMPARISON TO CONVENTIONAL INSULATORS: HIGHER SURFACE FLASHOVER FIELD STRENGTH; SMALLER PHYSICAL DIMENSIONS FOR EQUIVALENT VOLTAGE HOLDOFF; ...

    SBIR Phase II 1989 Department of DefenseMissile Defense Agency
  6. HIGH POWER LOW IMPEDANCE LIGHT WEIGHT TRANSMISSION LINES

    SBC: Tetra Corporation            Topic: N/A

    THE DEVELOPMENT OF HIGH POWER, LOW IMPEDANCE, LIGHTWEIGHT ENERGY STORAGE TRANSMISSION LINES FOR PULSE-POWER APPLICATIONS IS CRUCIAL FORSMALLER, LIGHTWEIGHT, SPACE-BASED, PULSE-POWER SYSTEMS. DEVELOPMENT OF HIGH DIELECTRIC ENERGY STORAGE LINE TECHNOLOGY WOULD GREATLY REDUCETHE SIZE, WEIGHT, AND COMPLEXITY OF PULSE POWER SYSTEMS UTILIZING THESE TYPES OF COMPONENTS. EFFICIENT TRANSPORT OF 400KV, 100K ...

    SBIR Phase II 1989 Department of DefenseMissile Defense Agency
  7. Crystal Growth in KTiOPO(4)-NaTiOPO(4)

    SBC: Crystal Associates Inc            Topic: N/A

    Phase I will study tailoring the refractive index elliposoid of KTP to permit Type II phase matching at wavelengths shorter than 900nm, thereby permitting the SHG of laser diodes and Ti:Al2O3 solid state lasers. The system of solid solutions from mixing KTP with CsTiOPO4 will be studied and crystals grown. The nonlinear optical, mechanical and electrical properties of these crystals will be determ ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  8. Electroformed High Resolution Thick Metal Film for Hyper-Dense Electronic Packaging

    SBC: Electrochemical Systems, Inc.            Topic: N/A

    20 microns thick metal film deposits at thin film resolutions will ensure densely integrated MCMs essential to advanced electronic devices such as onboard data and signal processing systems (OBDP). 99.8% dense and 99.8% pure monolithic and environmentally stable copper interconnects in analog applications will remove heat and control impedance with 5-10 times capacity. Two to three times higher ch ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  9. ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES

    SBC: Electron Transfer Tech            Topic: N/A

    PHOSPHINE (PH3) IS A GAS NECESSARY FOR MAKING COMPOUND SEMICONDUCTORS SUCH AS INP, INAS(1-X)PX, GAP, AND GAAS(1-X)PX AS WELL AS A DOPANT SOURCE FOR SILICON. IT IS A VERY TOXIC GAS WITH A TLV OF 0.3 PPM. NEW REGULATIONS MAKE THE TRANSPORT, STORAGE, AND HANDLING OF COMPRESSED GAS CYLINDERS OF PHOSPHINE INCREASINGLY DIFFICULT. TO AVOID THESE PROBLEMS, WE ARE DEVELOPING A COMPACT POINT OF USE PHOSPHIN ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  10. Atomic Layer Epitaxy of GaN in a Multi-Wafer Rotating Disc Reactor

    SBC: EMCORE CORP.            Topic: N/A

    GaN and other III-V nitrides can be used for fabricating visible/UV optoelectronic devices. Sequential exposure of reactants using a commercial microwave Plasma Enhanced Atomic Layer Epitaxy reactor is proposed to grow high quality GaN films. The technique allows two dimensional layer-by-layer growth which reduces nitrogen vacancies commonly observed in the GaN films. PE-ALE also allows deposition ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
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