You are here
Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
-
Development of a Compact Electron Beam Accelerator
SBC: MICROWAVE TECHNOLGIES, INC. Topic: N/AN/A
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Embedded Sensors via Laser Engineered Net Shaping
SBC: OPTOMEC, INC. Topic: N/AOptomec Design Company proposes to use Laser Engineered Net Shaping (LENSTM), a Rapid Prototyping and Manufacturing (RP&M) technology currently under development at Sandia National Laboratories (SNL), as a new method for integrating instrumentation (e.g., embedded sensors) into metal structural components. SNL has demonstrated the ability of the LENSTM technology to produce near net shape stainles ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide
SBC: INTRINSIC SEMICONDUCTOR CORP. Topic: N/ASilicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Optimal SiC Source Powder for Bulk SiC Growth
SBC: INTRINSIC SEMICONDUCTOR CORP. Topic: N/AThe properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
MERCURY CADMIUM TELLURIDE FOR LONG WAVELENGTH (15-25 MICRONS) INFRARED SENSOR APPLICATIONS
SBC: Xacton Corp Topic: N/AN/A
SBIR Phase I 1990 Department of DefenseMissile Defense Agency -
Solid-State Spray Forming of Near-Net-Shape Structural Materials
SBC: INNOVATIVE TECHNOLOGY INC Topic: N/AThe objective of this research is to demonstrate the feasibility of spray forming aluminum Metal Matrix Composites (MMC) in the solid-state physical form as a light weight structural material. It is anticipated that this innovative manufacturing process will provide opportunities to fabricate near-net-shape spacecraft and interceptor structures with unique material properties. The process called S ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
CROSSED-FIELD WIGGLER
SBC: MISSION RESEARCH CORP. Topic: N/AN/A
SBIR Phase I 1990 Department of DefenseMissile Defense Agency -
High Effectiveness Regenerators for Very Low Temperature Cryocooler
SBC: General Pneumatics Corporation Topic: N/AREGENERATORS THERMOFLUID CRYOREFRIGERATORS THE NEW TYPE OF REGENERATORS PROPOSED OFFERS FOR 10 K CRYOCOOLERS THE PROSPECT OF REDUCTIONS OF 100'S OF WATTS OF POWER AND KILOGRAMS OF WEIGHT PER WATT OF REFRIGERATION, AND EXTENSION OF OPERATING LIFE BY 10,000'S OF HOURS. PHASE 1 WILL DEFINE THE MODELING, THERMOFLUID PERFORMANCE TRADE-OFFS, MATERIAL PROPERTIES, PRODUCTION AND TEST METHODS. THESE REGENE ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
Ion-Implanted 2-D MESFET Technology for Wireless Communications
SBC: Advanced Device Technologies, Topic: N/AThis Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
MULTI LEVEL SECURE IMAGE OPERATING SYSTEM
SBC: ARIES Technology Corporation Topic: N/AN/A
SBIR Phase I 1994 Department of DefenseMissile Defense Agency