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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. PULSE DETONATION SYNTHESIS FOR HIGH TEMPERATURE CERAMIC COMPOSITES AND COATINGS

    SBC: Adroit Systems, Inc.            Topic: N/A

    Adroit Systems, Inc. will develop a Pulse Detonation Synthesis (PDS) process to manufacture ceramic powders from gas-powder reactant mixtures more efficiently and inexpensively than current methods. A high combustion rate and simple design make the PDS system capable of mass producing these powders, which are used as raw materials for high-temperature, high-performance ceramics and ceramic composi ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  2. GAN UV/BLUE SOLID STATE LASER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  3. BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  4. HIGH POWER MOS TRANSISTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophist ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  5. Superconductor Magnetic Memory

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE DEVELOPMENT OF A DENSE, FAST SUPERCONDUCTING MEMORY TECHNOLOGY WILL FACILITATE THE INTEGRATION OF SUPERCONDUCTING ELECTRONICS INTO SPACE AND ELECTONIC WARFARE SYSTEMS. A SUPERCONDUCTOR BASED MAGNETIC MEMORY TECHNOLOGY IS PROPOSED WHICH CAN BE USED TO FABRICATE MULTIMEGABIT SUPERCONDUCTOR MEMORIES WITHOUT REQUIRING LARGE SCALE INTEGRATION OF JOSPEHSON JUNCTIONS. THIS MEMORY WELL SUITED FOR HIGH ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  6. Efficient Dopant Activation In P-type III-V Nitrides

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE AVAILABILITY OF EFFICIENT BLUE LIGHT EMITTERS WOULD BREAK OPEN COMMERCIAL AND DEFENSE MARKETS IN FULL COLOR DISPLAYS AND HIGH DENSITY OPTICAL STORAGE SYSTEMS. NITRIDE-BASED DEVICES HAVE THE GREATEST POTENTIAL AS HIGH EFFICIENCY EMITTERS BECAUSE OF THEIR DIRECT BANDGAP AND CONVENIENT HETEROSTRUCTURES SYSTEM. HOWEVER, THE LACK OF OF SUITABLE P-TYPE DOPING TECHNOLOGY HAS GREATLY HINDERED DEVELOPM ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  7. Lattice Matched III-V Nitride Heterostructures

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The III-V nitrides have recently emerged as the primary material system for UV/blue light emitters. Higher bandgap energy (Al,Ga)N alloys are currently employed as cladding layers for GaN and (In,Ga)N active region LEDs and laser structures. Lattice mismatch between the cladding and active regions, however, restricts both the thickness and composition of the layers which in turn limits the operati ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  8. High Temperature SiC Power MOSFETs

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Large power handling systems of 1KW to 150KW are required in a many applications ranging from aerospace to consumer electronics to industrial power systems and transportation. Conventional electronic systems, based on silicon or gallium arsenide devices, require a large number of devices enhanced with extra heat sinking and sophisticated control systems to ensure synchronous operation. The extra ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  9. Blue-Green LED Arrays for Scanned Linear Array Imaging

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Virtual displays have tremendous potential in defense applications such as virtual reality training, battlefield support, and information systems. Full color displays require red, blue, and green LED arrays of which only red is commercially available. This program teams ATMI, a recognized leader in the GaN growth community, with Reflection Technology, a leader in virtual display technology. ATMI w ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. High Dielectric MOSFET Oxides on SiC

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Increasing thermal and power loads in circuitry demand electrical components which can operate at temperatures up to 400 C and beyond . A combination of high bandgap semiconductors and improved dielectrics is needed to solve this problem. ATMI has maj or programs in production of both SiC/GaN semiconductor materials and high dielectric constant complex oxide thin films, in particular barium stront ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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