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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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SBIR Phase I: Tertiary Recycling Process for Polymer-Based Automotive Components
SBC: Adherent Technologies, Inc. Topic: N/AN/A
SBIR Phase I 1997 National Science Foundation -
SBIR Phase I: Liquid Crystalline Thermoset (LCT) Adhesives for High-Temperature Applications
SBC: Adherent Technologies, Inc. Topic: N/AN/A
SBIR Phase I 1997 National Science Foundation -
SBIR Phase I: Moisture-Resistant Composite Finishes
SBC: Adherent Technologies, Inc. Topic: N/AN/A
SBIR Phase I 1997 National Science Foundation -
PULSE DETONATION SYNTHESIS FOR HIGH TEMPERATURE CERAMIC COMPOSITES AND COATINGS
SBC: Adroit Systems, Inc. Topic: N/AAdroit Systems, Inc. will develop a Pulse Detonation Synthesis (PDS) process to manufacture ceramic powders from gas-powder reactant mixtures more efficiently and inexpensively than current methods. A high combustion rate and simple design make the PDS system capable of mass producing these powders, which are used as raw materials for high-temperature, high-performance ceramics and ceramic composi ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
Ion-Implanted 2-D MESFET Technology for Wireless Communications
SBC: Advanced Device Technologies, Topic: N/AThis Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Co-Located Triple Pan QWIP Focal Plane Arrays
SBC: ADVANCED DEVICE TECHNOLOGY, INC. Topic: N/AWe propose to develop Co-located Triple Band Quantum Well Infrared Photodetectors (QWIP) Arrays. The innovative features are: Co-located Triple Band Structure The detection of short waveband (0.7-2.micro.m) midwaveband (3-5.micro.m) and long waveband (8-13.micro.m) signals takes in the same pixel (Co-located pixel). Simultaneous Detection of 3-Color Signals The design is such that detection of 3- ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Parallel Design Tools for Optimization of Smart Structures
SBC: ADVANCED MECHANICS TECHNOLOGY, LTD. Topic: N/AN/A
SBIR Phase I 1999 Department of DefenseMissile Defense Agency -
A Computer Simulation Software for Drilling Operations Based on a New Rock/Bit Interaction Model
SBC: AAC International Topic: N/AN/A
SBIR Phase I 1999 National Science Foundation -
SBIR Phase I: Artificial Intelligence-Based Acoustic Emission Monitoring for Bit Wear During Deep Drilling
SBC: AAC International Topic: N/AN/A
SBIR Phase I 1997 National Science Foundation -
SBIR Phase I: A System for High-Speed Metal Machining
SBC: AESOP, INC. Topic: N/AN/A
SBIR Phase I 1997 National Science Foundation